18525313. BIAS TRIGGERED MODE-SWITCHABLE PHOTODETECTOR FROM BROADBAND TO NEAR INFRARED simplified abstract (PURDUE RESEARCH FOUNDATION)
Contents
- 1 BIAS TRIGGERED MODE-SWITCHABLE PHOTODETECTOR FROM BROADBAND TO NEAR INFRARED
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 BIAS TRIGGERED MODE-SWITCHABLE PHOTODETECTOR FROM BROADBAND TO NEAR INFRARED - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
BIAS TRIGGERED MODE-SWITCHABLE PHOTODETECTOR FROM BROADBAND TO NEAR INFRARED
Organization Name
Inventor(s)
Sunghwan Lee of West Lafayette IN (US)
Hyeonghun Kim of West Lafayette IN (US)
BIAS TRIGGERED MODE-SWITCHABLE PHOTODETECTOR FROM BROADBAND TO NEAR INFRARED - A simplified explanation of the abstract
This abstract first appeared for US patent application 18525313 titled 'BIAS TRIGGERED MODE-SWITCHABLE PHOTODETECTOR FROM BROADBAND TO NEAR INFRARED
Simplified Explanation
The abstract describes a patent application for a photodetector diode with a silicon substrate having an n-type black silicon structure, a junction layer coating, and a transparent second electrode.
- Silicon substrate with n-type black silicon structure
- Junction layer coating applied to the black silicon structure
- Transparent second electrode positioned on top of the junction layer
Potential Applications
The technology can be used in various applications such as solar cells, photodetectors, and imaging sensors.
Problems Solved
The innovation improves the efficiency and sensitivity of photodetectors by utilizing the unique properties of black silicon.
Benefits
- Enhanced performance in light detection
- Improved signal-to-noise ratio
- Increased durability and reliability
Potential Commercial Applications
- Solar energy industry
- Security and surveillance systems
- Medical imaging devices
Possible Prior Art
Prior art may include patents or research papers related to photodetectors, black silicon technology, and transparent electrodes in semiconductor devices.
Unanswered Questions
How does the black silicon structure affect the performance of the photodetector diode?
The black silicon structure increases light absorption and reduces reflection, leading to improved sensitivity and efficiency in light detection.
What are the specific characteristics of the junction layer coating in this technology?
The junction layer coating is designed to enhance the electrical properties at the interface between the black silicon structure and the transparent electrode, ensuring optimal performance of the photodetector diode.
Original Abstract Submitted
A photodetector diode may have a first electrode and a silicon substrate having an n-type black silicon (b-Si) structure formed thereon. The silicon substrate may be at least partially disposed on the first electrode. A junction layer coating may be applied to the b-Si structure. The photodetector diode may have a second electrode positioned on top of the junction layer. The second electrode being transparent.
