18525131. METHOD FOR NON-RESIST NANOLITHOGRAPHY simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 METHOD FOR NON-RESIST NANOLITHOGRAPHY
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD FOR NON-RESIST NANOLITHOGRAPHY - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METHOD FOR NON-RESIST NANOLITHOGRAPHY
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Miin-Jang Chen of Taipei City (TW)
Kuen-Yu Tsai of Taipei City (TW)
METHOD FOR NON-RESIST NANOLITHOGRAPHY - A simplified explanation of the abstract
This abstract first appeared for US patent application 18525131 titled 'METHOD FOR NON-RESIST NANOLITHOGRAPHY
Simplified Explanation
The method described in the abstract involves forming a combined patterned mask on a substrate to expose certain portions of the substrate for further processing. This method allows for the formation of trenches in the substrate based on the exposed portions, which can be useful in semiconductor device fabrication.
- Formation of a first patterned mask on the substrate with a first opening.
- Formation of a second patterned mask within the first opening of the first mask.
- Creation of a combined patterned mask with one or more second openings exposing unmasked portions of the substrate.
- Formation of trenches in the substrate corresponding to the exposed portions through the second openings.
Potential Applications
This technology can be applied in the manufacturing of various semiconductor devices where precise patterning and trench formation are required.
Problems Solved
This method helps in achieving accurate and controlled trench formation in semiconductor devices, which is crucial for their performance and functionality.
Benefits
The method provides a reliable way to create trenches in semiconductor substrates with high precision, contributing to the overall quality and efficiency of the devices.
Potential Commercial Applications
Potential commercial applications of this technology include semiconductor manufacturing companies looking to improve their fabrication processes for enhanced device performance.
Possible Prior Art
Prior art may include similar methods for forming patterns and trenches in semiconductor devices, but the specific technique described in this patent application may offer unique advantages in terms of precision and control.
Unanswered Questions
How does this method compare to existing techniques for trench formation in semiconductor devices?
This article does not provide a direct comparison with existing techniques, leaving the reader to wonder about the specific advantages or disadvantages of this method in relation to others.
What are the specific dimensions and tolerances that can be achieved using this method?
The article does not delve into the specific dimensions and tolerances that can be achieved through this method, leaving a gap in understanding regarding the precision capabilities of the process.
Original Abstract Submitted
A method for forming a semiconductor device is provided. A first patterned mask is formed on the substrate, the first patterned mask having a first opening therein. A second patterned mask is formed on the substrate in the first opening, the first patterned mask and the second patterned mask forming a combined patterned mask. The combined patterned mask is formed having one or more second openings, wherein one or more unmasked portions of the substrate are exposed. Trenches that correspond to the one or more unmasked portions of the substrate are formed in the substrate in the one or more second openings.
