18524621. MODIFIED FUSE STRUCTURE AND METHOD OF USE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
MODIFIED FUSE STRUCTURE AND METHOD OF USE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Meng-Sheng Chang of Hsinchu (TW)
Chien-Ying Chen of Hsinchu (TW)
MODIFIED FUSE STRUCTURE AND METHOD OF USE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18524621 titled 'MODIFIED FUSE STRUCTURE AND METHOD OF USE
Simplified Explanation
The patent application describes an antifuse structure for IC devices, which includes a dielectric antifuse structure formed on an active area with two electrodes and a dielectric composition between them. A programming transistor is connected to a voltage supply to form a resistive direct electrical connection during a programming operation.
- Explanation of the patent:
- Antifuse structure for IC devices - Dielectric antifuse structure with two electrodes and dielectric composition - Programming transistor for forming resistive direct electrical connection
- Potential applications of this technology:
- Non-volatile memory devices - Programmable logic devices - Field-programmable gate arrays
- Problems solved by this technology:
- Providing a reliable and efficient antifuse structure - Enabling selective programming of antifuse structures - Facilitating the formation of resistive direct electrical connections
- Benefits of this technology:
- Improved reliability and performance of IC devices - Enhanced programmability and flexibility in circuit design - Cost-effective manufacturing process
- Potential commercial applications of this technology:
- Semiconductor industry - Electronics manufacturing - Data storage and processing
- Possible prior art:
- Antifuse structures in IC devices - Dielectric compositions for electrical connections
Questions:
1. What are the specific voltage levels required for programming the antifuse structures in this technology? 2. How does the dielectric composition between the electrodes affect the resistance of the electrical connection formed during programming?
Original Abstract Submitted
An antifuse structure and IC devices incorporating such antifuse structures in which the antifuse structure includes an dielectric antifuse structure formed on an active area having a first dielectric antifuse electrode, a second dielectric antifuse electrode extending parallel to the first dielectric antifuse electrode, a first dielectric composition between the first dielectric antifuse electrode and the second dielectric antifuse electrode, and a first programming transistor electrically connected to a first voltage supply wherein, during a programming operation a programming voltage is selectively applied to certain of the dielectric antifuse structures to form a resistive direct electrical connection between the first dielectric antifuse electrode and the second dielectric antifuse electrode.
