18524477. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)

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SEMICONDUCTOR MEMORY DEVICE

Organization Name

Kioxia Corporation

Inventor(s)

Akio Sugahara of Yokohama (JP)

Zhao Lu of Ebina (JP)

Takehisa Kurosawa of Yokohama (JP)

Yuji Nagai of Sagamihara (JP)

SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18524477 titled 'SEMICONDUCTOR MEMORY DEVICE

Simplified Explanation

The semiconductor memory device described in the abstract consists of various components such as memory cell arrays, sense amplifiers, data registers, and control circuits. The device operates in two modes, with different input methods for executing operations.

  • The semiconductor memory device includes a first pad for receiving a first signal and a second pad for receiving a second signal.
  • It comprises a first memory cell array, a first sense amplifier connected to the memory cell array, and a first data register for storing user data.
  • The control circuit is responsible for executing operations targeting the memory cell array, which consists of multiple memory strings with memory cell transistors.
  • In one mode, a command set instructing the operation is inputted via the first pad, while in the other mode, the command set is inputted via the second pad.

Potential Applications

This technology can be applied in various electronic devices requiring memory storage, such as smartphones, tablets, and computers.

Problems Solved

This innovation solves the problem of efficiently storing and retrieving user data in semiconductor memory devices.

Benefits

The benefits of this technology include faster data access, improved memory management, and enhanced overall performance of electronic devices.

Potential Commercial Applications

The potential commercial applications of this technology can be seen in the consumer electronics industry, data centers, and other sectors requiring high-speed memory solutions.

Possible Prior Art

One possible prior art for this technology could be the development of similar semiconductor memory devices with different input methods for executing operations.

Unanswered Questions

How does this technology compare to existing memory devices in terms of speed and efficiency?

The article does not provide a direct comparison between this technology and existing memory devices in terms of speed and efficiency.

What are the specific commands that can be inputted via the first and second pads for executing operations?

The article does not detail the specific commands that can be inputted via the first and second pads for executing operations.


Original Abstract Submitted

A semiconductor memory device comprises: a first pad receiving a first signal; a second pad receiving a second signal; a first memory cell array; a first sense amplifier connected to the first memory cell array; a first data register connected to the first sense amplifier and configured to store user data read from the first memory cell array; and a control circuit configured to execute an operation targeting the first memory cell array. The first memory cell array comprises a plurality of first memory strings. The first memory strings each comprise a plurality of first memory cell transistors. In a first mode of this semiconductor memory device, a command set instructing the operation is inputted via the first pad. In a second mode of this semiconductor memory device, the command set is inputted via the second pad.