18524417. CONFORMAL TRANSFER DOPING METHOD FOR FIN-LIKE FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 CONFORMAL TRANSFER DOPING METHOD FOR FIN-LIKE FIELD EFFECT TRANSISTOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 CONFORMAL TRANSFER DOPING METHOD FOR FIN-LIKE FIELD EFFECT TRANSISTOR - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
CONFORMAL TRANSFER DOPING METHOD FOR FIN-LIKE FIELD EFFECT TRANSISTOR
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Sai-Hooi Yeong of Hsinchu County (TW)
Sheng-Chen Wang of Hsinchu County (TW)
Feng-Cheng Yang of Hsinchu County (TW)
Yen-Ming Chen of Hsin-Chu County (TW)
CONFORMAL TRANSFER DOPING METHOD FOR FIN-LIKE FIELD EFFECT TRANSISTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18524417 titled 'CONFORMAL TRANSFER DOPING METHOD FOR FIN-LIKE FIELD EFFECT TRANSISTOR
Simplified Explanation
The patent application describes doping techniques for FinFETs, including forming a doped amorphous layer over a fin structure and using knock-on implantation to drive a dopant into the fin structure, creating a doped feature.
- Formation of a fin structure
- Creation of a doped amorphous layer over the fin structure
- Implementation of knock-on implantation process to drive dopant into the fin structure
- Crystallization of at least a portion of the doped amorphous layer
- Use of amorphous silicon in the doped amorphous layer
Potential Applications
The technology can be applied in the semiconductor industry for enhancing the performance of FinFETs by improving doping techniques.
Problems Solved
This innovation addresses the challenge of efficiently doping FinFETs to enhance their functionality and performance.
Benefits
The technology enables precise doping of FinFETs, leading to improved device performance and efficiency in semiconductor applications.
Potential Commercial Applications
The technology can be utilized in the production of advanced semiconductor devices, leading to more efficient and high-performance electronic products.
Possible Prior Art
One possible prior art could be the use of traditional doping techniques in semiconductor manufacturing processes.
Unanswered Questions
How does this technology compare to existing doping methods in terms of efficiency and effectiveness?
The article does not provide a direct comparison between this technology and existing doping methods, leaving the reader to wonder about the specific advantages of this approach.
What are the potential challenges or limitations of implementing this doping technique on an industrial scale?
The article does not address the scalability or practicality of implementing this doping technique in large-scale semiconductor manufacturing processes, leaving a gap in understanding the real-world applicability of the innovation.
Original Abstract Submitted
Doping techniques for fin-like field effect transistors (FinFETs) are disclosed herein. An exemplary method includes forming a fin structure, forming a doped amorphous layer over a portion of the fin structure, and performing a knock-on implantation process to drive a dopant from the doped amorphous layer into the portion of the fin structure, thereby forming a doped feature. The doped amorphous layer includes a non-crystalline form of a material. In some implementations, the knock-on implantation process crystallizes at least a portion of the doped amorphous layer, such that the portion of the doped amorphous layer becomes a part of the fin structure. In some implementations, the doped amorphous layer includes amorphous silicon, and the knock-on implantation process crystallizes a portion of the doped amorphous silicon layer.
