18524195. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)

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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

Organization Name

TOYOTA JIDOSHA KABUSHIKI KAISHA

Inventor(s)

Hitoshi Fujioka of Nisshin-shi (JP)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18524195 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

The semiconductor device described in the patent application includes a semiconductor layer with trenches and trench gates placed within the trenches. The trenches run in one direction and are spaced apart from each other in a perpendicular direction.

  • The trenches consist of an inner trench situated between end trenches in the perpendicular direction, with end side walls facing each other in the first direction and longitudinal side walls in between.
  • The end side walls have a rougher surface compared to the smoother intermediate portions of the longitudinal side walls.
  • An insulating film within the inner trench has a greater thickness on the end side walls than on the intermediate portions of the longitudinal side walls.

Potential Applications: - This technology can be applied in the semiconductor industry for the development of advanced semiconductor devices with improved performance. - It can be used in the manufacturing of high-speed and high-power electronic devices.

Problems Solved: - Addresses the need for enhanced insulation within semiconductor devices to prevent electrical leakage and improve overall efficiency. - Solves the challenge of maintaining consistent thickness of insulating films in complex trench structures.

Benefits: - Improved performance and reliability of semiconductor devices. - Enhanced insulation properties leading to better overall device efficiency.

Commercial Applications: Title: Advanced Semiconductor Devices with Enhanced Insulation This technology can be utilized in the production of high-performance electronic devices such as power amplifiers, voltage regulators, and memory modules. The market implications include increased demand for efficient and reliable semiconductor components in various industries.

Questions about the Technology: 1. How does the surface roughness of the end side walls impact the performance of the semiconductor device? - The rougher surface helps to enhance the adhesion of the insulating film, improving its effectiveness in preventing electrical leakage. 2. What are the key advantages of having a thicker insulating film on the end side walls? - A thicker insulating film provides better insulation and protection against electrical interference, contributing to the overall reliability of the semiconductor device.


Original Abstract Submitted

A semiconductor device includes a semiconductor layer formed with trenches, and trench gates correspondingly disposed in the trenches. The trenches extend in a first direction, and are arranged spaced apart from each other in a second direction orthogonal to the first direction. The trenches include an inner trench located between end trenches in the second direction. The inner trench has end side walls opposite in the first direction, and longitudinal side walls between the end side walls. The end side walls have a surface roughness larger than that of intermediate portions of the longitudinal side walls, the intermediate portions being at an intermediate position in the first direction. An insulating film disposed in the inner trench has a larger thickness on at least one of the end side walls than on at least one of intermediate portions of the longitudinal side walls.

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