18524195. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME simplified abstract (DENSO CORPORATION)
Contents
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
Organization Name
Inventor(s)
Hitoshi Fujioka of Nisshin-shi (JP)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18524195 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
The semiconductor device described in the patent application includes a semiconductor layer with trenches and trench gates placed within the trenches. The trenches run in one direction and are spaced apart in a perpendicular direction. An inner trench is positioned between end trenches in the perpendicular direction, with end side walls and longitudinal side walls.
- The trenches in the semiconductor layer are arranged in a specific pattern, with an inner trench between end trenches.
- The inner trench has end side walls with a rougher surface than the longitudinal side walls.
- An insulating film within the inner trench has varying thickness on the end side walls compared to the longitudinal side walls.
Potential Applications: - This technology could be applied in the manufacturing of advanced semiconductor devices. - It may enhance the performance and efficiency of electronic components in various applications.
Problems Solved: - Provides improved insulation within the trenches of semiconductor devices. - Helps in reducing surface roughness and optimizing the thickness of insulating films.
Benefits: - Enhanced performance and reliability of semiconductor devices. - Improved manufacturing processes for electronic components.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology could be utilized in the production of high-performance electronic devices such as smartphones, computers, and other consumer electronics. It could also find applications in industrial equipment and automotive electronics, enhancing their efficiency and functionality.
Questions about Semiconductor Device Technology: 1. How does the varying thickness of the insulating film impact the performance of the semiconductor device? - The varying thickness of the insulating film helps in optimizing the insulation within the trenches, leading to improved device performance and reliability.
2. What are the potential challenges in implementing this technology in mass production? - Some challenges in mass production could include ensuring uniformity in the thickness of the insulating film and maintaining consistent surface roughness on the end side walls of the trenches.
Original Abstract Submitted
A semiconductor device includes a semiconductor layer formed with trenches, and trench gates correspondingly disposed in the trenches. The trenches extend in a first direction, and are arranged spaced apart from each other in a second direction orthogonal to the first direction. The trenches include an inner trench located between end trenches in the second direction. The inner trench has end side walls opposite in the first direction, and longitudinal side walls between the end side walls. The end side walls have a surface roughness larger than that of intermediate portions of the longitudinal side walls, the intermediate portions being at an intermediate position in the first direction. An insulating film disposed in the inner trench has a larger thickness on at least one of the end side walls than on at least one of intermediate portions of the longitudinal side walls.
