18524036. SEMICONDUCTOR DEVICE simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
Contents
SEMICONDUCTOR DEVICE
Organization Name
TOYOTA JIDOSHA KABUSHIKI KAISHA
Inventor(s)
MASATO Noborio of Nisshin-shi (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18524036 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation: The patent application describes a structure where impurity regions are formed alternately along a trench, with specific angles defined between the trench and the impurity regions.
Key Features and Innovation:
- Formation of impurity regions along a trench in an alternating pattern.
- Specific angles defined between the trench and the impurity regions for optimized performance.
Potential Applications: This technology could be applied in semiconductor manufacturing, specifically in the development of advanced electronic devices.
Problems Solved: This technology addresses the need for precise impurity region placement in semiconductor devices for improved functionality.
Benefits:
- Enhanced performance of electronic devices.
- Improved efficiency in semiconductor manufacturing processes.
Commercial Applications: Potential commercial applications include the production of high-performance electronic devices for various industries such as telecommunications and consumer electronics.
Questions about Impurity Region Formation: 1. How does the alternating impurity region formation along a trench improve device performance?
- The alternating impurity region formation optimizes the electrical properties of the device, leading to enhanced performance.
2. What are the specific angles between the trench and impurity regions, and how do they impact device functionality?
- The specific angles are designed to ensure efficient electrical conductivity and overall device performance.
Frequently Updated Research: There may be ongoing research in the semiconductor industry related to impurity region placement and its impact on device performance. Researchers are constantly exploring new techniques to enhance semiconductor device functionality.
Original Abstract Submitted
A first impurity region and a second impurity region are alternately formed along a longitudinal direction of a first trench. The second impurity region has: a first contact side in contact with the first trench; and a second contact side in contact with a second trench adjacent to the first trench. A first linear portion is defined to extend from a boundary of the first contact side toward the second trench, and a second linear portion is defined to extend from a boundary of the second contact side toward the first trench. A first angle between the first trench and the first linear portion connected to the first contact side is less than 90° and a second angle between the second trench and the second linear portion connected to the second contact side is less than 90° .
