18523508. PHOTOELECTRIC CONVERSION APPARATUS simplified abstract (CANON KABUSHIKI KAISHA)
Contents
- 1 PHOTOELECTRIC CONVERSION APPARATUS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 PHOTOELECTRIC CONVERSION APPARATUS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
PHOTOELECTRIC CONVERSION APPARATUS
Organization Name
Inventor(s)
HIROYUKI Tsuchiya of Tokyo (JP)
HIROSHI Sekine of Kanagawa (JP)
KAZUHIRO Morimoto of Kanagawa (JP)
PHOTOELECTRIC CONVERSION APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18523508 titled 'PHOTOELECTRIC CONVERSION APPARATUS
Simplified Explanation
The photoelectric conversion apparatus described in the patent application includes an avalanche photodiode with an oxide film on a semiconductor layer and a member overlapping the boundary between two semiconductor regions to generate a potential gradient for signal charge in the depth direction of the semiconductor layer.
- The apparatus includes an avalanche photodiode.
- An oxide film is disposed on a semiconductor layer.
- A member is provided on the oxide film, overlapping the boundary between semiconductor regions.
- The member has a different work function than the semiconductor regions to generate a potential gradient for signal charge.
Potential Applications
The technology described in the patent application could be applied in:
- High-speed imaging systems
- Optical communication devices
Problems Solved
The technology addresses the following issues:
- Improving signal charge generation in photoelectric conversion devices
- Enhancing the efficiency of avalanche photodiodes
Benefits
The benefits of this technology include:
- Increased sensitivity in photoelectric conversion
- Improved performance in low-light conditions
Potential Commercial Applications
The technology could be utilized in various commercial applications such as:
- Surveillance cameras
- Medical imaging devices
Possible Prior Art
One possible prior art for this technology could be the use of different materials with varying work functions in photoelectric conversion devices to enhance charge generation efficiency.
What are the potential limitations of this technology?
One potential limitation of this technology could be the complexity of manufacturing processes involved in creating the overlapping member with a different work function.
How does this technology compare to existing photoelectric conversion devices?
This technology offers improved efficiency in signal charge generation compared to traditional photoelectric conversion devices by utilizing a potential gradient for enhanced performance.
Original Abstract Submitted
A photoelectric conversion apparatus including an avalanche photodiode is provided. The photoelectric conversion apparatus includes an oxide film disposed on a semiconductor layer and a member provided on the oxide film. The member is disposed to overlap at least a boundary between a first semiconductor region and a third semiconductor region in plan view. The work function of the member differs from the work function of each of the first semiconductor region and the third semiconductor region so that a potential gradient for signal charge is generated in a depth direction of the semiconductor layer at at least the boundary.
