18523455. OXIDATION CONFORMALITY IMPROVEMENT WITH IN-SITU INTEGRATED PROCESSING simplified abstract (Applied Materials, Inc.)
Contents
- 1 OXIDATION CONFORMALITY IMPROVEMENT WITH IN-SITU INTEGRATED PROCESSING
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 OXIDATION CONFORMALITY IMPROVEMENT WITH IN-SITU INTEGRATED PROCESSING - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
OXIDATION CONFORMALITY IMPROVEMENT WITH IN-SITU INTEGRATED PROCESSING
Organization Name
Inventor(s)
Christopher S. Olsen of Fremont CA (US)
Erika Hansen of San Jose CA (US)
OXIDATION CONFORMALITY IMPROVEMENT WITH IN-SITU INTEGRATED PROCESSING - A simplified explanation of the abstract
This abstract first appeared for US patent application 18523455 titled 'OXIDATION CONFORMALITY IMPROVEMENT WITH IN-SITU INTEGRATED PROCESSING
Simplified Explanation
The patent application describes methods of treating a substrate with memory holes or trenches by exposing it to a vacuum, treating it with a pre-treatment gas or plasma, and oxidizing it while still under vacuum.
- The method involves exposing a substrate with memory holes or trenches to a vacuum.
- The substrate is then treated with a pre-treatment gas or plasma.
- The substrate is oxidized while still under vacuum.
- Some memory holes may have impurity buildup.
Potential Applications
The technology could be applied in semiconductor manufacturing, specifically in the production of memory devices.
Problems Solved
This technology helps in improving the quality and performance of memory devices by effectively treating substrates with memory holes or trenches.
Benefits
The method provides a more efficient and effective way of treating substrates with memory holes, leading to enhanced device performance and reliability.
Potential Commercial Applications
"Enhancing Memory Device Manufacturing Process with Substrate Treatment Technology"
Possible Prior Art
There may be prior art related to methods of treating substrates in semiconductor manufacturing processes, but specific examples are not provided in the abstract.
Unanswered Questions
How does this method compare to existing substrate treatment techniques in terms of cost and efficiency?
The article does not provide a comparison with existing techniques, so it is unclear how this method stacks up in terms of cost and efficiency.
Are there any limitations to the size or shape of the memory holes or trenches that can be effectively treated using this method?
The abstract does not mention any limitations regarding the size or shape of the memory holes or trenches, so it is uncertain if there are any restrictions in this regard.
Original Abstract Submitted
Methods of treating a substrate are provided. In some embodiments, the method includes exposing a substrate to a vacuum, wherein the substrate has one or more memory holes or trenches. The method further includes treating the substrate with a pre-treatment gas or plasma. The method includes oxidizing the substrate while the substrate is still under the vacuum. In some embodiments, the one or more memory holes have impurity buildup.
