18523401. WORDLINE CONTACT FORMATION FOR NAND DEVICE simplified abstract (Applied Materials, Inc.)
Contents
WORDLINE CONTACT FORMATION FOR NAND DEVICE
Organization Name
Inventor(s)
HsiangYu Lee of Cupertino CA (US)
Pradeep Subrahmanyan of Cupertino CA (US)
Changwoo Sun of San Jose CA (US)
WORDLINE CONTACT FORMATION FOR NAND DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18523401 titled 'WORDLINE CONTACT FORMATION FOR NAND DEVICE
The patent application describes a method for forming direct wordline contacts in 3-D NAND devices by creating contact openings of varying depths in a film stack and depositing conductive materials to form wordlines and wordline contacts.
- Film stack with alternating first and second layers
- Contact openings of different depths in the film stack
- Liner deposition within contact openings
- Formation of wordline openings by removing first layers
- Deposition of first conductive material to create wordlines
- Removal of liner at the bottom of each contact opening
- Deposition of second conductive material to form wordline contacts
Potential Applications: - Memory storage devices - Semiconductor manufacturing - Electronics industry
Problems Solved: - Improving the efficiency and performance of 3-D NAND devices - Enhancing the reliability of wordline contacts
Benefits: - Increased data storage capacity - Enhanced device durability - Improved overall device performance
Commercial Applications: Title: "Advanced Direct Wordline Contact Formation for 3-D NAND Devices" This technology can be utilized in the production of high-capacity memory storage devices for consumer electronics, data centers, and other applications requiring reliable and efficient data storage solutions.
Prior Art: Readers can explore prior research on 3-D NAND device fabrication processes, wordline contact formation techniques, and semiconductor manufacturing methods to gain a deeper understanding of the innovation presented in this patent application.
Frequently Updated Research: Researchers in the field of semiconductor technology and memory storage devices may be conducting ongoing studies to further optimize wordline contact formation processes and enhance the performance of 3-D NAND devices. Stay informed about the latest advancements in this area to leverage cutting-edge technologies for future developments.
Questions about Direct Wordline Contact Formation for 3-D NAND Devices:
1. How does the method of creating contact openings of varying depths contribute to the efficiency of wordline contact formation in 3-D NAND devices?
- By creating contact openings of different depths, the method allows for precise placement of conductive materials, optimizing the formation of wordlines and wordline contacts for improved device performance.
2. What are the potential challenges associated with depositing multiple layers of conductive materials within the contact openings?
- The deposition of multiple layers of conductive materials within the contact openings may require precise control to prevent issues such as voids or uneven distribution, which could impact the reliability and functionality of the wordline contacts.
Original Abstract Submitted
Disclosed are approaches for direct wordline contact formation for 3-D NAND devices. One method may include providing a film stack including a plurality of alternating first layers and second layers, and forming a plurality of contact openings in the film stack, wherein each contact opening is formed to a different etch depth relative to an upper surface of the film stack. The method may further include depositing a liner over the film stack including within each of the contact openings, removing the first layers to form a plurality of wordline openings in the film stack, and forming a plurality of wordlines by depositing a first conductive material within the wordline openings. The method may further include removing the liner from a bottom of each contact opening, and depositing a second conductive material within the contact openings to form a plurality of wordline contacts.
