18523060. SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD simplified abstract (Tokyo Electron Limited)
Contents
- 1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
Organization Name
Inventor(s)
Sung Duk Son of Gyeonggi-do (KR)
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18523060 titled 'SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
Simplified Explanation
The patent application describes a substrate processing apparatus that includes a processing container, a plasma box, a first gas nozzle, and a second gas nozzle.
- The processing container is designed to be depressurized.
- The plasma box generates plasma in its interior and communicates with the processing container.
- The first gas nozzle in the processing container introduces a cleaning gas.
- The second gas nozzle in the plasma box is adjusted to have a negative pressure compared to the processing container's interior.
Potential Applications
This technology can be used in semiconductor manufacturing, thin film deposition, and surface cleaning processes.
Problems Solved
This technology helps in achieving more efficient and precise substrate processing, leading to higher quality end products.
Benefits
The benefits of this technology include improved process control, enhanced cleaning capabilities, and increased productivity in substrate processing.
Potential Commercial Applications
Potential commercial applications of this technology include semiconductor fabrication facilities, research institutions, and industrial manufacturing plants.
Possible Prior Art
One possible prior art for this technology could be plasma processing systems used in semiconductor manufacturing.
Unanswered Questions
How does the negative pressure in the second gas nozzle impact the overall substrate processing?
The negative pressure in the second gas nozzle helps in controlling the flow of gases and plasma within the system, but the specific effects on the processing need further clarification.
What materials are suitable for constructing the processing container and plasma box to ensure compatibility with various cleaning gases and plasma generation?
The choice of materials for the construction of these components can significantly impact the performance and longevity of the substrate processing apparatus, but this information is not provided in the abstract.
Original Abstract Submitted
A substrate processing apparatus includes: a processing container configured to be depressurized; a plasma box including an interior, which communicates with an interior of the processing container, and configured such that plasma is generated in the interior of the plasma box; a first gas nozzle installed in the processing container and into which a cleaning gas is introduced; and a second gas nozzle installed in the plasma box and configured such that an interior of the second gas nozzle is adjusted to have a negative pressure with respect to the interior of the processing container.
