18523033. NON-VOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
NON-VOLATILE MEMORY DEVICE
Organization Name
Inventor(s)
Changmin Choi of Suwon-si (KR)
Ryoongbin Lee of Suwon-si (KR)
NON-VOLATILE MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18523033 titled 'NON-VOLATILE MEMORY DEVICE
The abstract describes a non-volatile memory device with a memory cell array consisting of word lines stacked on a substrate and a common source line below them. It also includes driving signal lines connected to a row decoder and pass transistor arrays with vertical pass transistors connected to the driving signal lines and word lines.
- Memory cell array with stacked word lines and a common source line
- Driving signal lines connected to a row decoder
- Pass transistor arrays with vertical pass transistors connecting driving signal lines and word lines
- Active region in pass transistor arrays with multiple transistors bonded to a single drain
- Main contact applying a signal to the active region
Potential Applications: - Non-volatile memory devices - Solid-state drives - Embedded memory in electronic devices
Problems Solved: - Efficient data storage in non-volatile memory - Improved performance of memory devices - Enhanced reliability of memory cells
Benefits: - Higher data storage capacity - Faster data access speeds - Increased durability and longevity of memory devices
Commercial Applications: Title: Non-Volatile Memory Devices: Commercial Uses and Market Implications This technology can be utilized in various electronic devices such as smartphones, tablets, laptops, and servers to enhance data storage capabilities and improve overall performance. The market for non-volatile memory devices is expected to grow significantly as the demand for high-speed, reliable data storage solutions continues to rise.
Prior Art: Further research can be conducted in the field of non-volatile memory devices, particularly focusing on pass transistor arrays and their impact on memory cell performance. Investigating previous patents and publications related to memory cell arrays and driving signal lines can provide valuable insights into the development of this technology.
Frequently Updated Research: Researchers are constantly exploring new ways to enhance the efficiency and reliability of non-volatile memory devices. Stay updated on the latest advancements in pass transistor technology and memory cell array design to understand the evolving landscape of data storage solutions.
Questions about Non-Volatile Memory Devices: 1. How does the design of pass transistor arrays impact the performance of non-volatile memory devices? Pass transistor arrays play a crucial role in connecting driving signal lines and word lines in memory cell arrays, affecting data access speeds and overall device reliability.
2. What are the potential challenges in scaling up the production of non-volatile memory devices with stacked word lines? Scaling up production may pose challenges in maintaining uniformity and consistency in memory cell arrays, impacting the performance and reliability of the devices.
Original Abstract Submitted
A non-volatile memory device including a memory cell array including a plurality of word lines stacked on a substrate in a first direction perpendicular to an upper surface of the substrate, and a common source line below the plurality of word lines, a plurality, of driving signal lines connected to a row decoder, and a plurality of pass transistor arrays each including a plurality of vertical pass transistors respectively connected the plurality of driving signal lines and the plurality of word lines, wherein each of the plurality of pass transistor arrays further include an active region including a drain to which at least two of the plurality of vertical pass transistors are simultaneously bonded, and a main contact applying a signal to the active region.
