18523021. HIGH-THROUGHPUT SILICON CARBIDE REACTOR simplified abstract (ASM IP Holding B.V.)
Contents
- 1 HIGH-THROUGHPUT SILICON CARBIDE REACTOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 HIGH-THROUGHPUT SILICON CARBIDE REACTOR - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
HIGH-THROUGHPUT SILICON CARBIDE REACTOR
Organization Name
Inventor(s)
Hichem M’saad of Paradise Valley AZ (US)
Ivo Johannes Raaijmakers of Amersfoort (NL)
Wentao Wang of Chandler AZ (US)
Herbert Terhorst of Amersfoort (NL)
HIGH-THROUGHPUT SILICON CARBIDE REACTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18523021 titled 'HIGH-THROUGHPUT SILICON CARBIDE REACTOR
Simplified Explanation
The patent application describes methods and systems for growing silicon carbide epitaxial layers using a reactor system with multiple reactor modules.
- The reactor system includes a heating load/lock chamber and a cooling load/lock chamber.
- Separate sets of coils inductively heat a susceptor, which heats graphite near one or more wafers.
- Multiple pyrometers measure the temperature of the graphite walls at different locations.
- A temperature controller adjusts power provided to the coils based on temperature differences and/or gradients.
- Separations between a wafer carrier and a wafer may be adjusted.
Potential Applications
The technology described in the patent application could be applied in the semiconductor industry for the production of silicon carbide epitaxial layers used in various electronic devices.
Problems Solved
This technology solves the problem of efficiently growing silicon carbide epitaxial layers with precise control over temperature gradients and uniformity, leading to improved quality and performance of electronic devices.
Benefits
The benefits of this technology include enhanced efficiency in the production of silicon carbide epitaxial layers, improved quality control, and ultimately, better performance of electronic devices utilizing these materials.
Potential Commercial Applications
The potential commercial applications of this technology include the manufacturing of high-performance electronic devices such as power electronics, LEDs, and RF devices.
Possible Prior Art
One possible prior art in this field could be the use of traditional CVD (Chemical Vapor Deposition) methods for growing silicon carbide epitaxial layers. However, the specific techniques and systems described in this patent application may offer improvements in terms of efficiency and control over the epitaxial growth process.
What are the specific temperature control mechanisms used in the reactor system described in the patent application?
The specific temperature control mechanisms used in the reactor system include multiple pyrometers measuring the temperature of the graphite walls at different locations, and a temperature controller adjusting power provided to the coils based on temperature differences and/or gradients.
How does the reactor system ensure uniform heating of the graphite near the wafers?
The reactor system ensures uniform heating of the graphite near the wafers by using separate sets of coils to inductively heat a susceptor, which then heats the graphite evenly, leading to consistent temperature distribution across the wafers.
Original Abstract Submitted
Methods and systems for growing silicon carbide epitaxial layers are described. In one example, a reactor system with multiple reactor modules may include a heating load/lock chamber and a cooling load/lock chamber. In another example, a reactor may be heated by separate sets of coils inductively heating a susceptor, which heats graphite near one or more wafers. Multiple pyrometers may measure the temperature of the graphite walls at different locations. Based on temperature differences and/or temperature gradients, a temperature controller may adjust power provided to one or more sets of coils. In yet another example, separations between a wafer carrier and a wafer may be adjusted.
