18522817. METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL AND METHOD OF MANUFACTURING WAFER USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL AND METHOD OF MANUFACTURING WAFER USING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL AND METHOD OF MANUFACTURING WAFER USING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Silicon Single Crystal Manufacturing
- 1.13 Original Abstract Submitted
METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL AND METHOD OF MANUFACTURING WAFER USING THE SAME
Organization Name
Inventor(s)
METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL AND METHOD OF MANUFACTURING WAFER USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18522817 titled 'METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL AND METHOD OF MANUFACTURING WAFER USING THE SAME
Simplified Explanation
This patent application describes a method of manufacturing a silicon single crystal by co-doping boron and phosphorus into the silicon melt.
- The method involves controlling the doping concentration ratio of phosphorus to boron and keeping the initial concentration of boron within a specific range during the crystal growth process.
Key Features and Innovation
- Co-doping boron and phosphorus into the silicon melt for crystal growth.
- Controlling the doping concentration ratio of phosphorus to boron.
- Maintaining the initial concentration of boron within a specific range.
Potential Applications
This technology can be used in the semiconductor industry for producing high-quality silicon single crystals used in electronic devices.
Problems Solved
- Ensures uniform doping of boron and phosphorus in the silicon crystal.
- Improves the quality and efficiency of silicon single crystal manufacturing.
Benefits
- Enhanced performance of electronic devices.
- Increased yield and quality of silicon single crystals.
- Cost-effective manufacturing process.
Commercial Applications
- Semiconductor manufacturing industry for producing high-quality silicon wafers.
- Electronics industry for improving the performance of electronic devices.
Prior Art
There may be prior research on co-doping techniques in silicon crystal growth processes that could be relevant to this patent application.
Frequently Updated Research
Stay updated on advancements in silicon crystal growth techniques and co-doping methods for semiconductor applications.
Questions about Silicon Single Crystal Manufacturing
What are the key benefits of co-doping boron and phosphorus in silicon crystal growth?
Co-doping boron and phosphorus helps in achieving uniform doping levels and improving the quality and efficiency of silicon single crystal manufacturing.
How does controlling the doping concentration ratio of phosphorus to boron impact the crystal growth process?
Controlling the doping concentration ratio ensures the desired properties and characteristics of the silicon single crystal, leading to enhanced performance in electronic devices.
Original Abstract Submitted
A method of manufacturing a silicon single crystal includes preparing a silicon melt and growing the silicon single crystal based on co-doping boron and phosphorus into the silicon melt. The growing of the silicon single crystal includes controlling, a doping concentration ratio, which is a ratio of an initial concentration of phosphorus to an initial concentration of boron, to be a particular ratio and controlling the initial concentration of boron to be within a range of about 8.0E12 atom/cmto about 1.5E13 atom/cm.
