18522752. METHOD OF MAKING SEMICONDUCTOR DEVICE INCLUDING METAL INSULATOR METAL CAPACITOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

METHOD OF MAKING SEMICONDUCTOR DEVICE INCLUDING METAL INSULATOR METAL CAPACITOR

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Yan-Jhih Huang of Hsinchu (TW)

Chun-Yuan Hsu of Hsinchu (TW)

Chien-Chung Chen of Hsinchu (TW)

Yung-Hsieh Lin of Hsinchu (TW)

METHOD OF MAKING SEMICONDUCTOR DEVICE INCLUDING METAL INSULATOR METAL CAPACITOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 18522752 titled 'METHOD OF MAKING SEMICONDUCTOR DEVICE INCLUDING METAL INSULATOR METAL CAPACITOR

Simplified Explanation

The abstract describes a method of making a semiconductor device by forming a circuit layer over a substrate, depositing an insulator, patterning the insulator to define trenches, and filling the trenches to create a capacitor.

• The method involves forming a circuit layer over a substrate.
• An insulator is deposited over the substrate.
• The insulator is patterned to define a test line trench, a first trench, and a second trench.
• The test line trench is filled to create a test line connected to the circuit layer.
• The first and second trenches are filled to define a capacitor.

Potential Applications

This technology can be applied in the manufacturing of various semiconductor devices, such as integrated circuits, memory chips, and microprocessors.

Problems Solved

This method helps in creating capacitors and test lines in semiconductor devices efficiently and accurately, improving the overall performance and reliability of the devices.

Benefits

The benefits of this technology include increased functionality and performance of semiconductor devices, improved manufacturing processes, and enhanced electrical connectivity within the devices.

Potential Commercial Applications

The potential commercial applications of this technology include the semiconductor industry, electronics manufacturing companies, and research institutions working on semiconductor device development.

Possible Prior Art

One possible prior art could be the traditional methods of creating capacitors and test lines in semiconductor devices, which may involve more complex and time-consuming processes compared to the method described in this patent application.

How does this method compare to existing techniques for creating capacitors in semiconductor devices?

This method offers a more efficient and precise way of creating capacitors in semiconductor devices compared to traditional techniques. It allows for better control over the capacitor's properties and dimensions, leading to improved device performance.

What are the potential challenges or limitations of implementing this method in large-scale semiconductor manufacturing?

One potential challenge could be the scalability of the process to mass production levels. Ensuring uniformity and consistency across a large number of devices may require further optimization and testing. Additionally, the cost-effectiveness of the method on a commercial scale would need to be evaluated.

Original Abstract Submitted

A method of making a semiconductor device includes forming a circuit layer over a substrate. The method further includes depositing an insulator over the substrate. The method further includes patterning the insulator to define a test line trench, a first trench, and a second trench, wherein the first trench is on a portion of the substrate exposed by the circuit layer. The method further includes filling the test line trench to define a test line electrically connected to the circuit layer. The method further includes filling the first trench and the second trench to define a capacitor.