18522343. MEMORY SYSTEM simplified abstract (Kioxia Corporation)
Contents
- 1 MEMORY SYSTEM
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY SYSTEM - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing memory systems in terms of speed and efficiency?
- 1.11 What are the potential limitations or drawbacks of implementing this technology in memory systems?
- 1.12 Original Abstract Submitted
MEMORY SYSTEM
Organization Name
Inventor(s)
Masanobu Shirakawa of Chigasaki (JP)
Tsukasa Tokutomi of Kamakura (JP)
MEMORY SYSTEM - A simplified explanation of the abstract
This abstract first appeared for US patent application 18522343 titled 'MEMORY SYSTEM
Simplified Explanation
The memory system described in the patent application involves a semiconductor memory and a controller capable of executing different operations by issuing command sequences and applying specific voltages to word lines in the memory cell array.
- The first operation involves reading data from the memory by applying different voltages to word lines and transmitting the data to the controller.
- The second operation involves applying different voltages to word lines but leaving the data in the memory cell array untransmitted to the controller.
Potential Applications
This technology could be applied in various memory systems, such as solid-state drives, to improve data reading and storage processes.
Problems Solved
This innovation solves the problem of efficiently reading and storing data in a semiconductor memory by optimizing voltage application to word lines.
Benefits
The benefits of this technology include faster data reading processes, improved data storage efficiency, and overall enhanced performance of memory systems.
Potential Commercial Applications
One potential commercial application of this technology could be in the development of high-speed and high-capacity solid-state drives for consumer electronics and data storage servers.
Possible Prior Art
One possible prior art for this technology could be the use of different voltage levels in memory systems to optimize data reading and storage processes.
Unanswered Questions
How does this technology compare to existing memory systems in terms of speed and efficiency?
This article does not provide a direct comparison between this technology and existing memory systems in terms of speed and efficiency.
What are the potential limitations or drawbacks of implementing this technology in memory systems?
This article does not discuss any potential limitations or drawbacks of implementing this technology in memory systems.
Original Abstract Submitted
According to one embodiment, a memory system includes a semiconductor memory and a controller. The memory system is capable of executing a first operation and a second operation. In the first operation, the controller issues a first command sequence, the semiconductor memory applies a first voltage to a first word line and applies a second voltage to a second word line to read data from the first memory, and the read data is transmitted to the controller from the semiconductor memory. In the second operation, the controller issues a second command sequence, the semiconductor memory applies a third voltage to the first word line and applies a fourth voltage to the second word line, and data held in the memory cell array is left untransmitted to the controller.
