18522276. SEMICONDUCTOR DEVICE simplified abstract (Rohm Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Satoshi Iwahashi of Kyoto (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18522276 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a semiconductor layer with a super junction structure and element structures formed at equal intervals on one surface.
- The semiconductor layer has a first conductivity type.
- The element structures are formed in the first surface of the semiconductor layer.
- The super junction structure is formed in the semiconductor layer.
Potential Applications
The technology could be applied in:
- Power electronics
- Solar cells
- LED lighting
Problems Solved
This technology helps in:
- Improving efficiency in power conversion
- Enhancing performance of electronic devices
Benefits
The benefits of this technology include:
- Increased power efficiency
- Enhanced device performance
- Improved reliability
Potential Commercial Applications
The technology could be commercially applied in:
- Power supply units
- Electric vehicles
- Renewable energy systems
Possible Prior Art
One possible prior art for this technology could be:
- Super junction structures in semiconductor devices
Unanswered Questions
How does the super junction structure impact the overall performance of the semiconductor device?
The super junction structure helps in reducing on-state resistance and improving breakdown voltage.
What are the specific manufacturing processes involved in creating the element structures at equal intervals?
The specific manufacturing processes may involve lithography, etching, and doping techniques to create the element structures.
Original Abstract Submitted
There is provided a semiconductor device including a semiconductor layer having a first conductivity type and including a first surface and a second surface on an opposite side of the first surface, a plurality of element structures formed in the first surface of the semiconductor layer at equal intervals in one direction, and a super junction structure formed in the semiconductor layer.
