18522042. SEMICONDUCTOR DEVICE MANUFACTURING METHOD simplified abstract (CANON KABUSHIKI KAISHA)
Contents
- 1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Organization Name
Inventor(s)
HIROSHI Sekine of Kanagawa (JP)
KAZUHIRO Morimoto of Kanagawa (JP)
SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18522042 titled 'SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Simplified Explanation
The semiconductor device manufacturing method described in the abstract involves preparing two substrates, forming semiconductor devices and wiring layers on each substrate, thinning one substrate to expose an insulating region, forming a through-electrode to connect to the wiring layer, and joining the substrates to be electrically connected.
- Preparation of two substrates with different planes facing each other
- Formation of semiconductor devices and wiring layers on each substrate
- Thinning of one substrate to expose an insulating region
- Formation of a through-electrode to connect to the wiring layer
- Joining of the substrates to be electrically connected
Potential Applications
The technology described in this patent application could be applied in the manufacturing of advanced semiconductor devices, integrated circuits, and electronic components.
Problems Solved
This technology solves the problem of efficiently connecting semiconductor devices and wiring layers on different substrates while maintaining electrical connectivity.
Benefits
The benefits of this technology include improved performance and reliability of semiconductor devices, increased integration density, and enhanced functionality of electronic systems.
Potential Commercial Applications
- "Advanced Semiconductor Device Manufacturing Method for Enhanced Connectivity"
Possible Prior Art
There may be prior art related to methods for connecting semiconductor devices on different substrates, but specific examples are not provided in this article.
Unanswered Questions
How does this technology compare to existing methods for connecting semiconductor devices on different substrates?
This article does not provide a direct comparison with existing methods, leaving the reader to wonder about the advantages and disadvantages of this new approach.
What are the specific materials and processes used in thinning the substrate to expose the insulating region?
The article does not delve into the details of the thinning process, leaving a gap in understanding the practical implementation of this technology.
Original Abstract Submitted
A semiconductor device manufacturing method including: preparing a first substrate having a first plane and a second plane facing the first plane; preparing a second substrate having a third plane and a fourth plane facing the third plane; forming a first semiconductor device and a first wiring layer near the first plane in the first substrate; forming an insulating region near the third plane in the second substrate; after the forming the insulating region, forming a second semiconductor device and a second wiring layer near the third plane; after the forming the second semiconductor device and the second wiring layer, thinning the second substrate from the fourth plane to expose the insulating region; after exposing, forming a through-electrode configured to penetrate through the insulating region and be connected to the second wiring layer; and joining the first and second substrates so as to be electrically connected to each other.
