18522013. PHOTOELECTRIC CONVERSION APPARATUS simplified abstract (CANON KABUSHIKI KAISHA)

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PHOTOELECTRIC CONVERSION APPARATUS

Organization Name

CANON KABUSHIKI KAISHA

Inventor(s)

HIROSHI Sekine of Kanagawa (JP)

KAZUHIRO Morimoto of Kanagawa (JP)

KOSEI Uehira of Tokyo (JP)

PHOTOELECTRIC CONVERSION APPARATUS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18522013 titled 'PHOTOELECTRIC CONVERSION APPARATUS

Simplified Explanation

The patent application describes a photoelectric conversion apparatus with two components: one containing avalanche photodiodes on a substrate with a wiring layer, and the other containing a quenching device on a substrate with a wiring layer and an insulating region with a through-electrode.

  • The first component includes a substrate with avalanche photodiodes and a wiring layer.
  • The second component includes a substrate with a quenching device, a wiring layer, and an insulating region with a through-electrode.
  • The two components are electrically connected in a region overlapping the pixel region.

Potential Applications

The technology described in this patent application could be used in:

  • High-performance imaging systems
  • Remote sensing devices
  • Medical imaging equipment

Problems Solved

This technology addresses issues such as:

  • Improving signal-to-noise ratio in imaging devices
  • Enhancing sensitivity in low-light conditions
  • Reducing noise and interference in electronic systems

Benefits

The benefits of this technology include:

  • Higher quality images with improved clarity
  • Increased efficiency in capturing and processing light signals
  • Enhanced performance in challenging lighting conditions

Potential Commercial Applications

The technology could be applied in various commercial sectors such as:

  • Surveillance and security systems
  • Scientific research equipment
  • Aerospace and defense technology

Possible Prior Art

One possible prior art for this technology could be the use of avalanche photodiodes in photoelectric conversion devices. Another could be the integration of quenching devices in electronic systems to reduce noise and interference.

Unanswered Questions

How does this technology compare to existing photoelectric conversion devices on the market?

The article does not provide a direct comparison with existing technologies in the market. It would be beneficial to understand the specific advantages and disadvantages of this new technology compared to what is currently available.

What are the potential limitations or challenges in implementing this technology on a larger scale?

The article does not address any potential limitations or challenges that may arise when scaling up the production or implementation of this technology. It would be important to consider factors such as cost, manufacturing processes, and compatibility with existing systems.


Original Abstract Submitted

A photoelectric conversion apparatus including: a first component including a first substrate (FS) having a first plane and a pixel region in which avalanche photodiodes are arranged, and a first wiring layer provided on a side where the first plane of the FS is provided; and a second component including a second substrate (SS), a quenching device, and a second wiring layer, the SS having a third plane, the second wiring layer being provided on a side where the third plane of the SS is provided. The SS has an insulating region, and the insulating region has a through-electrode provided in a through-region that penetrates through the SS. The quenching device is separated from another element by the insulating region. The first component and the second component are electrically connected to each other in a region that overlaps the pixel region in a plan view.

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