18521994. INTERCONNECT STRUCTURE AND ELECTRONIC DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 INTERCONNECT STRUCTURE AND ELECTRONIC DEVICE INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTERCONNECT STRUCTURE AND ELECTRONIC DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to traditional interconnect structures in terms of performance and efficiency?
- 1.11 What are the potential challenges or limitations in implementing this technology on a larger scale in electronic devices?
- 1.12 Original Abstract Submitted
INTERCONNECT STRUCTURE AND ELECTRONIC DEVICE INCLUDING THE SAME
Organization Name
Inventor(s)
Keunwook Shin of Suwon-si (KR)
Hyeonjin Shin of Suwon-si (KR)
Changhyun Kim of Suwon-si (KR)
Kyung-Eun Byun of Suwon-si (KR)
INTERCONNECT STRUCTURE AND ELECTRONIC DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18521994 titled 'INTERCONNECT STRUCTURE AND ELECTRONIC DEVICE INCLUDING THE SAME
Simplified Explanation
An interconnect structure described in the patent application includes a first dielectric layer with a trench, a first conductive layer with multiple stacked graphene layers in the trench, a second dielectric layer with a through hole extending to the trench, and a second conductive layer in the through hole.
- First dielectric layer with a trench
- First conductive layer with stacked graphene layers
- Second dielectric layer with a through hole
- Second conductive layer in the through hole
Potential Applications
The technology described in the patent application could be applied in the semiconductor industry for advanced interconnect structures in electronic devices.
Problems Solved
This technology solves the problem of improving the performance and efficiency of interconnect structures by utilizing graphene layers for conductivity.
Benefits
The use of graphene layers in the interconnect structure can lead to enhanced electrical conductivity, reduced resistance, and improved overall performance of electronic devices.
Potential Commercial Applications
"Advanced Interconnect Structures in Electronic Devices"
Possible Prior Art
There may be prior art related to the use of graphene in interconnect structures in the semiconductor industry, but specific examples would need to be researched further.
Unanswered Questions
How does this technology compare to traditional interconnect structures in terms of performance and efficiency?
The article does not provide a direct comparison between this technology and traditional interconnect structures in terms of performance and efficiency. Further research or testing may be needed to determine the specific advantages of this innovation.
What are the potential challenges or limitations in implementing this technology on a larger scale in electronic devices?
The article does not address the potential challenges or limitations in implementing this technology on a larger scale in electronic devices. Factors such as cost, scalability, and compatibility with existing manufacturing processes could be important considerations that need to be explored further.
Original Abstract Submitted
An interconnect structure may include a first dielectric layer including a trench, a first conductive layer in the trench and including a plurality of first graphene layers stacked in a direction from an inner surface of the trench toward a center of the trench, a second dielectric layer on the first dielectric layer and including a through hole extending to the trench, and a second conductive layer in the through hole.
