18521560. SUB 60NM ETCHLESS MRAM DEVICES BY ION BEAM ETCHING FABRICATED T-SHAPED BOTTOM ELECTRODE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 SUB 60NM ETCHLESS MRAM DEVICES BY ION BEAM ETCHING FABRICATED T-SHAPED BOTTOM ELECTRODE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SUB 60NM ETCHLESS MRAM DEVICES BY ION BEAM ETCHING FABRICATED T-SHAPED BOTTOM ELECTRODE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SUB 60NM ETCHLESS MRAM DEVICES BY ION BEAM ETCHING FABRICATED T-SHAPED BOTTOM ELECTRODE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Dongna Shen of San Jose CA (US)
Yu-Jen Wang of San Jose CA (US)
SUB 60NM ETCHLESS MRAM DEVICES BY ION BEAM ETCHING FABRICATED T-SHAPED BOTTOM ELECTRODE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18521560 titled 'SUB 60NM ETCHLESS MRAM DEVICES BY ION BEAM ETCHING FABRICATED T-SHAPED BOTTOM ELECTRODE
Simplified Explanation
The patent application describes a method for fabricating a T-shaped bottom electrode structure for Magnetic Tunnel Junction (MTJ) devices.
- A first conductive layer is patterned and trimmed to form a sub 30 nm conductive via on a bottom electrode.
- The conductive via is encapsulated with a dielectric layer and planarized.
- A second conductive layer is deposited and patterned to form a sub 60 nm second conductive layer, creating a T-shaped bottom electrode.
- MTJ stacks are deposited on the T-shaped bottom electrode and on the first bottom electrode.
- A top electrode contacts the MTJ stack on the T-shaped bottom electrode plug.
Potential Applications
This technology can be applied in the development of advanced memory devices, such as magnetic random-access memory (MRAM) and non-volatile magnetic memory.
Problems Solved
This innovation addresses the challenge of fabricating small-scale MTJ devices with improved performance and reliability.
Benefits
The T-shaped bottom electrode structure allows for better control of the MTJ device properties, leading to enhanced memory device performance.
Potential Commercial Applications
The technology can be utilized in the production of high-density, low-power memory devices for various electronic applications.
Possible Prior Art
Prior art may include methods for fabricating MTJ devices with different bottom electrode structures, such as single-layer or multi-layer configurations.
Unanswered Questions
How does this technology compare to existing MTJ device fabrication methods?
This article does not provide a direct comparison with other fabrication methods for MTJ devices.
What are the specific performance improvements achieved with the T-shaped bottom electrode structure?
The article does not detail the specific performance enhancements resulting from the T-shaped bottom electrode design.
Original Abstract Submitted
A first conductive layer is patterned and trimmed to form a sub 30 nm conductive via on a first bottom electrode. The conductive via is encapsulated with a first dielectric layer and planarized to expose a top surface of the conductive via. A second conductive layer is deposited over the first dielectric layer and the conductive via. The second conductive layer is patterned to form a sub 60 nm second conductive layer wherein the conductive via and second conductive layer together form a T-shaped second bottom electrode. MTJ stacks are deposited on the T-shaped second bottom electrode and on the first bottom electrode wherein the MTJ stacks are discontinuous. A second dielectric layer is deposited over the MTJ stacks and planarized to expose a top surface of the MTJ stack on the T-shaped second bottom electrode. A top electrode contacts the MTJ stack on the T-shaped second bottom electrode plug.
