18521476. MEMORY CIRCUIT AND METHOD OF OPERATING SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

MEMORY CIRCUIT AND METHOD OF OPERATING SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Yi-Ching Liu of Hsinchu (TW)

Chia-En Huang of Hsinchu (TW)

Yih Wang of Hsinchu (TW)

MEMORY CIRCUIT AND METHOD OF OPERATING SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18521476 titled 'MEMORY CIRCUIT AND METHOD OF OPERATING SAME

Simplified Explanation

The memory circuit described in the patent application includes multiple memory cells and transistors arranged on different layers, with bit lines and source lines connecting them. Here is a simplified explanation of the abstract:

• The memory circuit has a first memory cell on one layer, a second memory cell on a different layer, and a select transistor on yet another layer.
• A first bit line connects the memory cells and a first source line connects the memory cells and the select transistor.
• A second source line is also present, connecting to the select transistor.

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1. 1. 1. Potential Applications of this Technology

• Data storage in electronic devices
• Memory modules for computers and servers

1. 1. 1. Problems Solved by this Technology

• Efficient memory access and storage
• Compact design for memory circuits

1. 1. 1. Benefits of this Technology

• Faster data retrieval
• Higher memory density

1. 1. 1. Potential Commercial Applications of this Technology
         1. Memory Circuit Innovation for Enhanced Data Storage

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1. 1. 1. Possible Prior Art

There may be prior patents or publications related to memory circuits with multiple layers and interconnected memory cells. One example could be a patent for a similar memory circuit design with different arrangements of memory cells and transistors.

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1. 1. 1. Unanswered Questions

1. 1. 1. 1. How does this memory circuit compare to existing memory technologies in terms of speed and capacity?

This article does not provide a direct comparison with existing memory technologies, leaving the reader to wonder about the performance metrics of this new memory circuit.

1. 1. 1. 1. Are there any limitations or drawbacks to implementing this memory circuit in practical devices?

The article does not address any potential limitations or challenges that may arise when implementing this memory circuit in real-world applications, leaving room for speculation on its feasibility and practicality.

Original Abstract Submitted

A memory circuit includes a first memory cell on a first layer, a second memory cell on a second layer different from the first layer, a first select transistor on a third layer different from the first layer and the second layer, and a first bit line extending in a first direction, and being coupled to the first memory cell and the second memory cell. The memory circuit further includes a first source line extending in the first direction, being coupled to the first memory cell, the second memory cell and the first select transistor, and being separated from the first bit line in a second direction different from the first direction. memory circuit includes a second source line extending in the first direction, and being coupled to the first select transistor.