18521175. APPARATUS AND TEST ELEMENT GROUP simplified abstract (Micron Technology, Inc.)
Contents
APPARATUS AND TEST ELEMENT GROUP
Organization Name
Inventor(s)
Akiyoshi Seko of Higashihiroshima (JP)
Yu Kosuge of Higashihiroshima (JP)
Takahiro Sonoda of Higashihiroshima (JP)
Kazuo Aizawa of Higashihiroshima (JP)
APPARATUS AND TEST ELEMENT GROUP - A simplified explanation of the abstract
This abstract first appeared for US patent application 18521175 titled 'APPARATUS AND TEST ELEMENT GROUP
The abstract of the patent application describes an apparatus with a pad above a semiconductor substrate, an n-well in the substrate, and a floating p-well below the pad surrounded by the n-well.
- Simplified Explanation:
- Apparatus with pad, n-well, and floating p-well in a semiconductor substrate.
- Key Features and Innovation:
- Pad above semiconductor substrate. - N-well in the substrate. - Floating p-well below the pad. - P-well surrounded by the n-well.
- Potential Applications:
- Semiconductor manufacturing. - Integrated circuit design.
- Problems Solved:
- Ensuring proper isolation of components. - Enhancing performance of semiconductor devices.
- Benefits:
- Improved functionality. - Enhanced reliability. - Increased efficiency in semiconductor processes.
- Commercial Applications:
- Semiconductor industry for manufacturing and design of integrated circuits.
- Questions about the Technology:
1. How does the floating p-well contribute to the overall performance of the semiconductor device? 2. What are the specific advantages of having the p-well surrounded by the n-well in the substrate?
- Frequently Updated Research:
- Ongoing studies on optimizing the design and implementation of floating p-wells in semiconductor devices.
Original Abstract Submitted
According to one or more embodiments of the disclosure, an apparatus comprising a pad above a semiconductor substrate, an n-well in the semiconductor substrate, and a floating p-well in the semiconductor substrate is provided. The floating p-well is below the pad and surrounded by the n-well in the semiconductor substrate.
