18520785. STABILIZED VOLTAGE GENERATION CIRCUIT AND SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)

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STABILIZED VOLTAGE GENERATION CIRCUIT AND SEMICONDUCTOR DEVICE

Organization Name

ROHM CO., LTD.

Inventor(s)

Hiroshi Yoshikawa of Kyoto (JP)

STABILIZED VOLTAGE GENERATION CIRCUIT AND SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18520785 titled 'STABILIZED VOLTAGE GENERATION CIRCUIT AND SEMICONDUCTOR DEVICE

Simplified Explanation

The stabilized voltage generation circuit described in the abstract includes a first voltage generation circuit that generates a first voltage with positive temperature characteristics, and a second voltage generation circuit that generates a second voltage with negative temperature characteristics based on the difference in gate threshold voltage between two MOSFETs.

  • The first voltage generation circuit generates a voltage with positive temperature characteristics.
  • The second voltage generation circuit includes two MOSFETs of different conductivity types to generate a voltage with negative temperature characteristics.
  • The output voltage is the sum of the first and second voltages.

Potential Applications

The technology could be applied in:

  • Power management systems
  • Battery charging circuits
  • Voltage regulators

Problems Solved

This technology addresses issues such as:

  • Temperature fluctuations affecting voltage stability
  • Inefficient voltage regulation
  • Limited control over output voltage

Benefits

The benefits of this technology include:

  • Improved voltage stability
  • Enhanced temperature compensation
  • Higher efficiency in voltage regulation

Potential Commercial Applications

A potential commercial application for this technology could be in:

  • Consumer electronics
  • Automotive electronics
  • Industrial automation systems

Possible Prior Art

One possible prior art for this technology could be:

  • Voltage regulators with temperature compensation features

Unanswered Questions

How does this technology compare to traditional voltage regulation methods?

This technology offers improved temperature compensation and stability compared to traditional methods, but how does it fare in terms of cost and complexity?

Are there any limitations to the use of this technology in high-power applications?

While the technology seems suitable for various applications, are there any limitations or challenges when it comes to high-power systems that need to be considered?


Original Abstract Submitted

The stabilized voltage generation circuit includes: a first voltage generation circuit configured to generate a first voltage with positive temperature characteristics; and a second voltage generation circuit including a first MOSFET having a gate of a first conductivity type and a second MOSFET having a gate of a second conductivity type different from the first conductivity type and configured to generate a second voltage with negative temperature characteristics based on the difference in gate threshold voltage between the first and second MOSFETs. The output voltage is generated based on the sum voltage of the first and second voltages.