18520730. SEMICONDUCTOR DEVICE WITH BACKSIDE GATE ISOLATION STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

SEMICONDUCTOR DEVICE WITH BACKSIDE GATE ISOLATION STRUCTURE AND METHOD FOR FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Huan-Chieh Su of Changhua County (TW)

Chun-Yuan Chen of Hsinchu (TW)

Li-Zhen Yu of New Taipei City (TW)

Lo-Heng Chang of Hsinchu (TW)

Cheng-Chi Chuang of New Taipei City (TW)

Kuan-Lun Cheng of Hsin-Chu (TW)

Chih-Hao Wang of Hsinchu County (TW)

SEMICONDUCTOR DEVICE WITH BACKSIDE GATE ISOLATION STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18520730 titled 'SEMICONDUCTOR DEVICE WITH BACKSIDE GATE ISOLATION STRUCTURE AND METHOD FOR FORMING THE SAME

Simplified Explanation

The semiconductor device described in the abstract includes a complex structure of dielectric and semiconductor layers, gate structures, and fin structures for improved performance and efficiency.

• The device features a first dielectric layer as a base, with a stack of semiconductor layers on top.
• Gate structures wrap around each semiconductor layer, extending lengthwise along a direction.
• Dielectric fin structures and isolation structures are embedded in the gate structure on opposite sides of the semiconductor layer stack.
• The dielectric fin structure has a smaller width compared to the isolation structure, with different dielectric layers extending through the gate and first dielectric layers.

Potential Applications

This technology could be applied in advanced semiconductor devices, such as high-performance transistors, memory devices, and integrated circuits.

Problems Solved

This innovation addresses challenges in semiconductor device design, such as improving performance, reducing power consumption, and enhancing integration density.

Benefits

The benefits of this technology include increased efficiency, improved functionality, enhanced reliability, and potential cost savings in semiconductor manufacturing.

Potential Commercial Applications

This technology could find commercial applications in the semiconductor industry for developing cutting-edge electronic devices with superior performance and functionality.

Possible Prior Art

Prior art in semiconductor device design may include similar structures involving dielectric and semiconductor layers, gate structures, and fin structures for optimizing device performance and efficiency.

How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?

This article does not provide a direct comparison with existing semiconductor device structures to evaluate performance and efficiency differences.

What are the specific manufacturing processes involved in creating the complex structure described in the patent application?

The article does not detail the specific manufacturing processes required to fabricate the complex semiconductor device structure outlined in the patent application.

Original Abstract Submitted

A semiconductor device includes a first dielectric layer, a stack of semiconductor layers disposed over the first dielectric layer, a gate structure wrapping around each of the semiconductor layers and extending lengthwise along a direction, and a dielectric fin structure and an isolation structure disposed on opposite sides of the stack of semiconductor layers and embedded in the gate structure. The dielectric fin structure has a first width along the direction smaller than a second width of the isolation structure along the direction. The isolation structure includes a second dielectric layer extending through the gate structure and the first dielectric layer, and a third dielectric layer extending through the first dielectric layer and disposed on a bottom surface of the gate structure and a sidewall of the first dielectric layer.