18519516. SEMICONDUCTOR STRUCTURE AND METHOD MAKING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

SEMICONDUCTOR STRUCTURE AND METHOD MAKING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Hsin-Yen Huang of Yonghe City (TW)

Kai-Fang Cheng of Taoyuan City (TW)

Chi-Lin Teng of Taichung City (TW)

Hai-Ching Chen of Hsin-Chu City (TW)

Tien-I Bao of Taoyuan County (TW)

SEMICONDUCTOR STRUCTURE AND METHOD MAKING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18519516 titled 'SEMICONDUCTOR STRUCTURE AND METHOD MAKING THE SAME

Simplified Explanation

The method described in the patent application involves forming an integrated circuit structure by providing a substrate with a conductive feature, then layering aluminum-containing dielectric and low-k dielectric layers on top of it, and finally etching the low-k dielectric layer to create a contact trench aligned with the conductive feature.

• Substrate with conductive feature provided
• Aluminum-containing dielectric layer formed on the conductive feature
• Low-k dielectric layer formed on the Al-containing dielectric layer
• Etching of the low-k dielectric layer to create a contact trench aligned with the conductive feature
• Bottom of the contact trench on the surface of the Al-containing dielectric layer

Potential Applications

• Semiconductor manufacturing
• Integrated circuit fabrication
• Electronics industry

Problems Solved

• Improved integration of different dielectric materials
• Enhanced contact formation process
• Increased efficiency in circuit structure formation

Benefits

• Better performance of integrated circuits
• Enhanced reliability of contact structures
• Improved overall functionality of electronic devices

Original Abstract Submitted

The present disclosure provides a method for forming an integrated circuit (IC) structure. The method comprises providing a substrate including a conductive feature; forming aluminum (Al)-containing dielectric layer on the conductive feature; forming a low-k dielectric layer on the Al-containing dielectric layer; and etching the low-k dielectric layer to form a contact trench aligned with the conductive feature. A bottom of the contact trench is on a surface of the Al-containing dielectric layer.