18519256. METHOD FOR OBTAINING AN INTEGRATED DEVICE COMPRISING USING AN ETCHING MASK TO DEFINE DICING LINES simplified abstract (Murata Manufacturing Co., Ltd.)
Contents
- 1 METHOD FOR OBTAINING AN INTEGRATED DEVICE COMPRISING USING AN ETCHING MASK TO DEFINE DICING LINES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD FOR OBTAINING AN INTEGRATED DEVICE COMPRISING USING AN ETCHING MASK TO DEFINE DICING LINES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
METHOD FOR OBTAINING AN INTEGRATED DEVICE COMPRISING USING AN ETCHING MASK TO DEFINE DICING LINES
Organization Name
Murata Manufacturing Co., Ltd.
Inventor(s)
Florent Lallemand of Hérouville Saint-Clair (FR)
François Le Cornec of Caen (FR)
Florent Tanay of Carpiquet (FR)
METHOD FOR OBTAINING AN INTEGRATED DEVICE COMPRISING USING AN ETCHING MASK TO DEFINE DICING LINES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18519256 titled 'METHOD FOR OBTAINING AN INTEGRATED DEVICE COMPRISING USING AN ETCHING MASK TO DEFINE DICING LINES
Simplified Explanation
The patent application describes a method for obtaining an integrated device by forming a metal barrier layer above a substrate, anodizing a metal layer to create porous regions, and etching the porous regions to define device regions and dicing lines.
- Forming a metal barrier layer above a substrate
- Forming an anodizable metal layer on the metal barrier layer
- Anodizing the metal layer to create first and second porous regions with straight pores
- Using an etching mask to selectively etch the second porous region to define device regions
- Defining dicing lines by etching the first porous region
Potential Applications
The technology could be applied in the manufacturing of integrated devices such as sensors, actuators, or microfluidic devices.
Problems Solved
This method allows for the precise definition of device regions and dicing lines in integrated devices, improving the overall functionality and performance of the devices.
Benefits
- Enhanced precision in defining device regions - Improved control over the manufacturing process - Increased efficiency in producing integrated devices
Potential Commercial Applications
"Integrated Device Manufacturing Method for Enhanced Precision and Control"
Possible Prior Art
There may be prior art related to methods for defining device regions and dicing lines in integrated devices, but specific examples are not provided in the abstract.
Unanswered Questions
How does this method compare to existing techniques for defining device regions in integrated devices?
The article does not provide a comparison with existing techniques, leaving the reader to wonder about the advantages and limitations of this new method.
What are the specific materials and equipment required to implement this method?
The abstract does not detail the specific materials or equipment needed for the process, leaving readers curious about the practical aspects of implementing this technology.
Original Abstract Submitted
A method for obtaining an integrated device that includes: forming a metal barrier layer above a substrate; forming an anodizable metal layer on the metal barrier layer; anodizing a first region and a second region of the anodizable metal layer to obtain respectively a first porous region and a second porous region both having a plurality of substantially straight pores that extend from a top surface of the porous region towards the metal barrier layer; forming an etching mask above at least the first porous region having an opening above the second porous region; and etching bottom ends of pores of the second porous region through the opening of the etching mask to obtain pores that form a device region, and pores in the first porous region that form a dicing line, the integrated device being delimited at least by the dicing line.
