18519248. DYNAMIC READ CALIBRATION simplified abstract (Micron Technology, Inc.)

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DYNAMIC READ CALIBRATION

Organization Name

Micron Technology, Inc.

Inventor(s)

Li-Te Chang of San Jose CA (US)

Aaron Lee of Sunnyvale CA (US)

Zhenming Zhou of San Jose CA (US)

Murong Lang of San Jose CA (US)

DYNAMIC READ CALIBRATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 18519248 titled 'DYNAMIC READ CALIBRATION

Simplified Explanation

The patent application abstract describes a system that includes a memory device with multiple cells and a processing device to perform various operations related to data storage and retrieval.

  • Identifying a group of wordlines connected to a subset of cells and assigning a specified charge loss classification value to that group.
  • Selecting a page level and a first set of cells, determining a value of a first data state metric for the first set of cells.
  • Identifying a second set of cells charged to a specified charge state and determining a value of a second data state metric.
  • Maintaining a skew counter of the second data state metric and updating a read reference voltage offset.
  • Applying the updated read reference voltage offset in a read operation.

Potential Applications

This technology could be applied in various data storage systems, such as solid-state drives, to improve data retention and retrieval processes.

Problems Solved

This technology addresses issues related to data loss, data corruption, and data retrieval efficiency in memory devices with multiple cells.

Benefits

The system offers improved data reliability, faster data access speeds, and enhanced overall performance of memory devices.

Potential Commercial Applications

Potential commercial applications of this technology include data storage solutions for consumer electronics, enterprise storage systems, and cloud computing infrastructure.

Possible Prior Art

One possible prior art for this technology could be advancements in memory cell technology, such as improvements in data retention capabilities and read/write operations in memory devices.

Unanswered Questions

How does this technology compare to existing data storage solutions in terms of performance and reliability?

This article does not provide a direct comparison with existing data storage solutions, so it is unclear how this technology stacks up against current industry standards.

What are the potential limitations or challenges in implementing this technology on a larger scale?

The article does not address any potential limitations or challenges that may arise when scaling up this technology for commercial production.


Original Abstract Submitted

A system includes a memory device with multiple cells and a processing device to perform operations including: identifying a group of wordlines, each connected to a subset of cells, and assigning a specified charge loss classification value to that group. The operations can also include selecting a page level, selecting a first set of cells, determining, for the first set of cells, a value of a first data state metric, identifying a second set of cells charged to a specified charge state, and determining a value of a second data state metric. The operations can also include maintaining a skew counter of the second data state metric, identifying and updating a read reference voltage offset, as well as applying the updated read reference voltage offset in a read operation.