18518735. CRYSTALLINE INZNO OXIDE SEMICONDUCTOR, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE CRYSTALLINE INZNO OXIDE SEMICONDUCTOR simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 CRYSTALLINE INZNO OXIDE SEMICONDUCTOR, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE CRYSTALLINE INZNO OXIDE SEMICONDUCTOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 CRYSTALLINE INZNO OXIDE SEMICONDUCTOR, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE CRYSTALLINE INZNO OXIDE SEMICONDUCTOR - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
CRYSTALLINE INZNO OXIDE SEMICONDUCTOR, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE CRYSTALLINE INZNO OXIDE SEMICONDUCTOR
Organization Name
Inventor(s)
Jinseong Park of Suwon-si (KR)
CRYSTALLINE INZNO OXIDE SEMICONDUCTOR, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE CRYSTALLINE INZNO OXIDE SEMICONDUCTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18518735 titled 'CRYSTALLINE INZNO OXIDE SEMICONDUCTOR, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE CRYSTALLINE INZNO OXIDE SEMICONDUCTOR
Simplified Explanation
The patent application describes a crystalline InZnO oxide semiconductor with specific composition and crystallinity characteristics.
- The crystalline InZnO oxide semiconductor includes an oxide with In and Zn, where the In content is between 30 at % and 75 at %, and shows crystallinity at a specific 2-theta value in XRD analysis.
- The method of forming the semiconductor involves controlling the composition of In and Zn to achieve the desired characteristics.
- The semiconductor device incorporating the crystalline InZnO oxide semiconductor benefits from its specific composition and crystallinity, potentially leading to improved performance.
Potential Applications
The technology could be used in:
- High-performance electronic devices
- Thin-film transistors
- Solar cells
Problems Solved
- Lack of suitable semiconductor materials with desired characteristics
- Limited performance of current oxide semiconductors
Benefits
- Improved performance in semiconductor devices
- Enhanced efficiency in electronic applications
- Potential cost savings in production processes
Potential Commercial Applications
Optimizing InZnO oxide semiconductors for:
- Consumer electronics
- Renewable energy technologies
- Display panels
Possible Prior Art
Prior research on InZnO oxide semiconductors and their applications in electronic devices.
Unanswered Questions
How does the specific composition of In and Zn affect the performance of the semiconductor device?
The specific role of In and Zn content in achieving the desired characteristics of the semiconductor device is not explicitly discussed in the abstract. Further research may be needed to understand the relationship between composition and performance.
What are the potential scalability challenges in manufacturing crystalline InZnO oxide semiconductors for commercial applications?
The abstract does not address the scalability of producing these semiconductors for mass commercial use. Understanding the potential challenges in scaling up production processes could be crucial for successful commercialization.
Original Abstract Submitted
Provided are a crystalline InZnO oxide semiconductor, a method of forming the same, and a semiconductor device including the crystalline InZnO oxide semiconductor. The crystalline InZnO oxide semiconductor includes an oxide including In and Zn, wherein in Inductively Coupled Plasma-Mass Spectrometry (ICP-MS) analysis, a content of In among In and Zn is about 30 at % or more and about 75 at % or less, and the crystalline InZnO oxide semiconductor has a peak showing crystallinity at a 2-theta value between about 32.3 degrees and about 33.3 degrees in X-ray diffraction (XRD) analysis.
