18518190. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Jiun Shiung Wu of Pingtung County (TW)
Guan-Jie Shen of Hsinchu City (TW)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18518190 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The abstract describes a method of manufacturing a semiconductor device involving the formation of a fin structure with specific trimming and isolation insulating layer techniques, followed by the replacement of a dummy gate structure with a metal gate structure.
- Fin structure with bottom and upper parts is formed over a substrate
- Trimming of bottom part to reduce width of uppermost portion
- Trimming of bottom end corners of upper part to reduce width at bottom
- Formation of isolation insulating layer to allow upper part to protrude
- Creation of dummy gate structure and source/drain structure
- Formation of interlayer dielectric layer over structures
- Replacement of dummy gate structure with metal gate structure
Potential Applications
- Advanced semiconductor manufacturing processes
- High-performance electronic devices
- Improved efficiency and performance in integrated circuits
Problems Solved
- Enhancing semiconductor device performance
- Increasing transistor density
- Improving gate control in semiconductor devices
Benefits
- Enhanced device performance and efficiency
- Increased functionality in electronic devices
- Improved reliability and longevity of semiconductor devices
Original Abstract Submitted
In a method of manufacturing a semiconductor device, a fin structure having a bottom part and an upper part on the bottom part is formed over a substrate. The bottom part is trimmed so that a width of an uppermost portion of the bottom part is smaller than a width of the upper part. Bottom end corners of the upper part are trimmed to reduce a width of the upper part at a bottom of the upper part. An isolation insulating layer is formed so that the upper part protrudes from the isolation insulating layer. A dummy gate structure is formed. A source/drain structure is formed. An interlayer dielectric layer is formed over the dummy gate structure and the source/drain structure. The dummy gate structure is replaced with a metal gate structure.
