18517377. STACK-GATE CIRCUIT simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
STACK-GATE CIRCUIT
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Yung-Chow Peng of Hsinchu (TW)
STACK-GATE CIRCUIT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18517377 titled 'STACK-GATE CIRCUIT
Simplified Explanation
The abstract describes an integrated circuit where high-threshold transistors and low-threshold transistors are connected in pairs, with the gates of each pair connected together and the drains and sources interconnected in a specific configuration.
- Gates of high-threshold and low-threshold transistors are connected in pairs.
- Drains of high-threshold transistors are connected to sources of low-threshold transistors within each pair.
- Threshold-voltage of high-threshold transistors is larger than that of low-threshold transistors in each pair.
Potential Applications
- Power management circuits
- Signal amplification circuits
- Voltage regulation circuits
Problems Solved
- Improved performance in integrated circuits
- Enhanced control over threshold voltages
- Efficient power utilization
Benefits
- Higher efficiency in circuit operation
- Better control over signal processing
- Enhanced overall circuit performance
Original Abstract Submitted
In an integrated circuit, the gates of a first high-threshold transistor and a first low-threshold transistor are connected together, and the gates of a second high-threshold transistor and a second low-threshold transistor are connected together. The drain of the first high-threshold transistor is conductively connected to the source of the first low-threshold transistor, and the drain of the second high-threshold transistor is conductively connected to the source of the second low-threshold transistor. The gates of the first low-threshold transistor and the second low-threshold transistor are conductively connected to the drain of the first low-threshold transistor. The threshold-voltage of the first high-threshold transistor is larger than a threshold-voltage of the first low-threshold transistor. The threshold-voltage of the second high-threshold transistor is larger than a threshold-voltage of the second low-threshold transistor.
