18516719. LINE-END EXTENSION METHOD AND DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
LINE-END EXTENSION METHOD AND DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chih-Min Hsiao of Hsinchu (TW)
Shih-Ming Chang of Hsinchu (TW)
LINE-END EXTENSION METHOD AND DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18516719 titled 'LINE-END EXTENSION METHOD AND DEVICE
Simplified Explanation
The abstract describes methods of forming line-end extensions in devices. Here are the key points:
- Method involves forming a patterned photoresist on a hard mask layer.
- Line-end extension region is created in the hard mask layer, extending outward from the end of the first region.
- Line-end extension region is formed by changing a physical property of the hard mask layer.
Potential Applications
- Semiconductor manufacturing
- Nanotechnology
- Microelectronics
Problems Solved
- Improving resolution and accuracy of device fabrication
- Enhancing device performance
- Increasing device reliability
Benefits
- Enhanced device functionality
- Improved manufacturing processes
- Higher quality end products
Original Abstract Submitted
Methods of forming line-end extensions and devices having line-end extensions are provided. In some embodiments, a method includes forming a patterned photoresist on a first region of a hard mask layer. A line-end extension region is formed in the hard mask layer. The line-end extension region extends laterally outward from an end of the first region of the hard mask layer. The line-end extension region may be formed by changing a physical property of the hard mask layer at the line-end extension region.
