18515398. MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Organization Name

TOYOTA JIDOSHA KABUSHIKI KAISHA

Inventor(s)

SHOSUKE Nakabayashi of Nisshin-shi (JP)

MASATAKE Nagaya of Nisshin-shi (JP)

CHIAKI Sasaoka of Nagoya-shi (JP)

ATSUSHI Tanaka of Nagoya-shi (JP)

DAISUKE Kawaguchi of Hamamatsu-shi (JP)

TOSHIKI Yui of Hamamatsu-shi (JP)

KEISUKE Hara of Hamamatsu-shi (JP)

TOMOMI Aratani of Hamamatsu-shi (JP)

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18515398 titled 'MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Simplified Explanation: The patent application describes a method for manufacturing a semiconductor device by forming two deformation restriction layers on opposite main surfaces of a semiconductor substrate. A laser beam is then applied through one of the layers to irradiate a specific depth inside the substrate, allowing for the removal of a device layer from the remaining substrate material.

• Key Features and Innovation:

   - Formation of deformation restriction layers on semiconductor substrate surfaces.
   - Laser beam application to irradiate and remove specific layers within the substrate.
   - Precise removal of device layer from the semiconductor substrate.

Potential Applications: This technology can be applied in the manufacturing of various semiconductor devices such as integrated circuits, sensors, and microprocessors.

Problems Solved: - Enables precise removal of device layers from semiconductor substrates. - Facilitates the manufacturing process of semiconductor devices with improved accuracy.

Benefits: - Enhanced precision in semiconductor device manufacturing. - Increased efficiency in the fabrication of semiconductor components.

Commercial Applications: The technology can be utilized in the production of advanced semiconductor devices for consumer electronics, telecommunications, and automotive industries, leading to improved performance and reliability of electronic products.

Prior Art: Researchers can explore prior patents related to laser processing of semiconductor materials and device layer removal techniques in semiconductor manufacturing.

Frequently Updated Research: Ongoing research in laser technology and semiconductor processing methods may provide further advancements in the precision and efficiency of device layer removal in semiconductor manufacturing.

Questions about Semiconductor Device Manufacturing: 1. How does the use of deformation restriction layers improve the precision of device layer removal in semiconductor manufacturing? 2. What are the potential challenges associated with laser beam application in semiconductor device fabrication?

Original Abstract Submitted

In a manufacturing method of a semiconductor device, a first deformation restriction layer and a second deformation restriction layer are formed on a first main surface and a second main surface of a semiconductor substrate, the first main surface being opposite to the second main surface, and the semiconductor substrate having a device structure formed adjacent to the first main surface. A laser beam is applied through the second deformation restriction layer on the second main surface of the semiconductor substrate so as to irradiate a plane extending at a predetermined depth inside of the semiconductor substrate with the laser beam. A device layer that is a part of the semiconductor substrate including the first main surface and the device structure from a remaining layer of the semiconductor substrate along the plane irradiated with the laser beam.