18515398. MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (DENSO CORPORATION)

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Organization Name

DENSO CORPORATION

Inventor(s)

SHOSUKE Nakabayashi of Nisshin-shi (JP)

MASATAKE Nagaya of Nisshin-shi (JP)

CHIAKI Sasaoka of Nagoya-shi (JP)

ATSUSHI Tanaka of Nagoya-shi (JP)

DAISUKE Kawaguchi of Hamamatsu-shi (JP)

TOSHIKI Yui of Hamamatsu-shi (JP)

KEISUKE Hara of Hamamatsu-shi (JP)

TOMOMI Aratani of Hamamatsu-shi (JP)

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18515398 titled 'MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a method for manufacturing a semiconductor device using laser beam technology to separate a device layer from a semiconductor substrate.

• Laser beam is used to irradiate a predetermined depth inside the semiconductor substrate.
• Device layer is separated from the remaining layer of the semiconductor substrate along the irradiated plane.

Key Features and Innovation

• Formation of deformation restriction layers on main surfaces of the semiconductor substrate.
• Laser beam application through the deformation restriction layer to separate the device layer.
• Precise separation of the device layer from the semiconductor substrate.

Potential Applications

This technology can be applied in the manufacturing of various semiconductor devices such as integrated circuits, sensors, and microprocessors.

Problems Solved

• Efficient separation of device layers from semiconductor substrates.
• Precision in manufacturing semiconductor devices.

Benefits

• Improved manufacturing process for semiconductor devices.
• Enhanced precision and control in device layer separation.

Commercial Applications

The technology can be utilized in the semiconductor industry for the production of advanced electronic devices, leading to improved performance and reliability in various applications.

Prior Art

Readers can explore prior research on laser beam technology in semiconductor manufacturing processes to understand the evolution of this innovation.

Frequently Updated Research

Stay updated on advancements in laser technology and semiconductor manufacturing processes to enhance the efficiency and effectiveness of this method.

Questions about Semiconductor Device Manufacturing

How does the laser beam technology improve the manufacturing process of semiconductor devices?

The laser beam technology allows for precise separation of device layers from semiconductor substrates, enhancing the overall manufacturing efficiency and accuracy.

What are the potential applications of this semiconductor device manufacturing method beyond the current scope?

The technology can potentially be applied in various industries requiring precise material separation processes, expanding its utility beyond semiconductor device manufacturing.

Original Abstract Submitted

In a manufacturing method of a semiconductor device, a first deformation restriction layer and a second deformation restriction layer are formed on a first main surface and a second main surface of a semiconductor substrate, the first main surface being opposite to the second main surface, and the semiconductor substrate having a device structure formed adjacent to the first main surface. A laser beam is applied through the second deformation restriction layer on the second main surface of the semiconductor substrate so as to irradiate a plane extending at a predetermined depth inside of the semiconductor substrate with the laser beam. A device layer that is a part of the semiconductor substrate including the first main surface and the device structure from a remaining layer of the semiconductor substrate along the plane irradiated with the laser beam.