18515275. SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Naoki Mitamura of Matsumoto-city (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18515275 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a transistor portion and a diode portion, with various regions and trenches on the semiconductor substrate.
- The device features a drift region of a first conductivity type, an anode region of a second conductivity type, a low concentration region, and a high concentration region.
- The trench portions are provided on the front surface of the semiconductor substrate.
- The anode region is located above the drift region in the diode portion.
- The low concentration region has a doping concentration lower than that of the anode region.
- The high concentration region has a doping concentration higher than that of the anode region.
Potential Applications: - Power electronics - Semiconductor industry - Electrical engineering
Problems Solved: - Efficient power management - Enhanced semiconductor device performance
Benefits: - Improved power handling capabilities - Increased efficiency in electronic devices
Commercial Applications: Title: Advanced Semiconductor Devices for Power Electronics This technology can be utilized in the development of high-performance power electronics for various industries, including automotive, renewable energy, and consumer electronics.
Questions about Semiconductor Devices: 1. How do semiconductor devices impact the efficiency of electronic systems?
- Semiconductor devices play a crucial role in enhancing the performance and efficiency of electronic systems by providing reliable power management solutions.
2. What are the key differences between semiconductor devices with different conductivity types?
- Semiconductor devices with different conductivity types exhibit unique characteristics that determine their functionality and applications.
Original Abstract Submitted
Provided is a semiconductor device including a transistor portion and a diode portion, where the semiconductor device including: a plurality of trench portions provided on a front surface of a semiconductor substrate; a drift region of a first conductivity type provided in the semiconductor substrate; an anode region of a second conductivity type provided above the drift region in the diode portion; a low concentration region provided above the anode region and having a doping concentration an absolute value of which is lower than that of the anode region; and a high concentration region of the second conductivity type provided above the anode region and having a doping concentration higher than that of the anode region.
