18514753. Integrated Circuit Devices and Methods for Making Such Devices simplified abstract (IMEC VZW)

Integrated Circuit Devices and Methods for Making Such Devices

Organization Name

IMEC VZW

Inventor(s)

Gaspard Hiblot of Leuven (BE)

Boon Teik Chan of Wilsele (BE)

Gioele Mirabelli of Leuven (BE)

Integrated Circuit Devices and Methods for Making Such Devices - A simplified explanation of the abstract

This abstract first appeared for US patent application 18514753 titled 'Integrated Circuit Devices and Methods for Making Such Devices

Simplified Explanation: The patent application describes a method for forming an integrated circuit device by removing substrate material from the backside of the substrate and providing an electrically conductive material in a via, electrically coupled to a buried power rail.

• Key Features and Innovation:

   - Formation of a semiconductor device on the frontside of a substrate.
   - Removal of substrate material from the backside of the substrate.
   - Deposition of a liner covering the backside of the substrate.
   - Anisotropic etching of the liner to expose a sacrificial plug.
   - Selective removal of the sacrificial plug.
   - Providing an electrically conductive material in the via.

• Potential Applications:

   - Semiconductor manufacturing
   - Integrated circuit design
   - Power management systems

• Problems Solved:

   - Efficient formation of integrated circuit devices
   - Improved electrical connectivity in semiconductor devices
   - Enhanced power distribution in integrated circuits

• Benefits:

   - Enhanced performance of semiconductor devices
   - Increased reliability of integrated circuits
   - Simplified manufacturing processes

• Commercial Applications:

   - This technology can be applied in the production of various electronic devices such as smartphones, tablets, and computers, improving their performance and efficiency.

• Prior Art:

   - Researchers and engineers can explore prior patents related to semiconductor device manufacturing, integrated circuit design, and power distribution systems.

• Frequently Updated Research:

   - Researchers in the field of semiconductor manufacturing may be conducting studies on advanced materials and processes for improving integrated circuit devices.

Questions about Integrated Circuit Device Formation:

1. What are the key steps involved in forming an integrated circuit device using the method described in the patent application?

  - The key steps include forming a semiconductor device on the frontside of a substrate, removing substrate material from the backside, depositing a liner, anisotropically etching the liner, removing the sacrificial plug, and providing an electrically conductive material in the via.

2. How does the method described in the patent application contribute to the advancement of semiconductor manufacturing processes?

  - The method offers a more efficient and reliable way to form integrated circuit devices, improving their performance and electrical connectivity.

Original Abstract Submitted

An integrated circuit device and method for forming the integrated circuit device are provided. The method includes: a) forming a semiconductor device on a frontside of a substrate comprising: a device layer on the frontside of the substrate, the device layer comprising a first active device, the substrate comprising: shallow trench isolation structures and a via filled with a sacrificial plug extending through the substrate material in a first separating portion; b) removing the substrate material from a backside of the substrate; c) depositing a liner covering the backside of the substrate; d) anisotropically etching the liner so as to expose a first end of the sacrificial plug, while retaining at least part of the liner in the separating portions; e) removing the sacrificial plug selectively with respect to the liner; and f) providing an electrically conductive material in the via, electrically coupled to a buried power rail.