18514010. ANTI-OXIDATION LAYER TO PREVENT DIELECTRIC LOSS FROM PLANARIZATION PROCESS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
ANTI-OXIDATION LAYER TO PREVENT DIELECTRIC LOSS FROM PLANARIZATION PROCESS
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Hsun-Chung Kuang of Hsinchu City (TW)
ANTI-OXIDATION LAYER TO PREVENT DIELECTRIC LOSS FROM PLANARIZATION PROCESS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18514010 titled 'ANTI-OXIDATION LAYER TO PREVENT DIELECTRIC LOSS FROM PLANARIZATION PROCESS
Simplified Explanation
The patent application describes a method for forming a conductive feature within a dielectric layer on a substrate.
- Form a dielectric layer over a substrate.
- Pattern the dielectric to create an opening.
- Deposit a conductive material within the opening.
- Perform a planarization process to remove excess conductive material.
- Apply an anti-oxidation layer on the conductive feature.
- Remove the anti-oxidation layer from the upper surfaces of the conductive feature.
Potential Applications
- Semiconductor manufacturing
- Microelectronics fabrication
- Integrated circuit production
Problems Solved
- Improving conductivity within dielectric layers
- Enhancing reliability of electronic components
- Reducing oxidation of conductive materials
Benefits
- Increased efficiency in electronic device manufacturing
- Enhanced performance of integrated circuits
- Improved longevity of semiconductor devices
Original Abstract Submitted
In some embodiments, the present disclosure relates to a method that includes forming a dielectric layer over a substrate and patterning the dielectric to form an opening in the dielectric layer. Further, a conductive material is formed within the opening of the dielectric layer. A planarization process is performed to remove portions of the conductive material arranged over the dielectric layer thereby forming a conductive feature within the opening of the dielectric layer. An anti-oxidation layer is formed on upper surfaces of the conductive feature, and then, the anti-oxidation layer is removed.
