18513640. PIEZOELECTRIC DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

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PIEZOELECTRIC DEVICE AND METHOD OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Chih-Ming Chen of Hsinchu City (TW)

PIEZOELECTRIC DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18513640 titled 'PIEZOELECTRIC DEVICE AND METHOD OF FORMING THE SAME

Simplified Explanation

The patent application describes a piezoelectric device with specific layers and terminals for improved performance.

  • The device includes a substrate, a metal-insulator-metal element, a hydrogen blocking layer, a passivation layer, a first contact terminal, and a second contact terminal.
  • The metal-insulator-metal element is placed on the substrate to generate piezoelectric effects.
  • A hydrogen blocking layer is added to prevent hydrogen diffusion and degradation of the device.
  • A passivation layer covers the hydrogen blocking layer and the metal-insulator-metal element for protection.
  • The first and second contact terminals are connected to the metal-insulator-metal element for electrical functionality.

Potential Applications

  • Sensing technology
  • Energy harvesting devices
  • Actuators and transducers

Problems Solved

  • Prevents hydrogen diffusion
  • Enhances device performance and longevity
  • Improves electrical connections and functionality

Benefits

  • Increased sensitivity and accuracy
  • Extended device lifespan
  • Enhanced reliability and performance


Original Abstract Submitted

A piezoelectric device including a substrate, a metal-insulator-metal element, a hydrogen blocking layer, a passivation layer, a first contact terminal and a second contact terminal is provided. The metal-insulator-metal element is disposed on the substrate. The hydrogen blocking layer is disposed on the metal-insulator-metal element. The passivation layer covers the hydrogen blocking layer and the metal-insulator-metal element. The first contact terminal is electrically connected to the metal-insulator-metal element. The second contact terminal is electrically connected to the metal-insulator-metal element.

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