18513430. MICROELECTRONIC DEVICES INCLUDING STADIUM STRUCTURES, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
Contents
- 1 MICROELECTRONIC DEVICES INCLUDING STADIUM STRUCTURES, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MICROELECTRONIC DEVICES INCLUDING STADIUM STRUCTURES, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Microelectronic Device Innovation
- 1.13 Original Abstract Submitted
MICROELECTRONIC DEVICES INCLUDING STADIUM STRUCTURES, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS
Organization Name
Inventor(s)
Harsh Narendrakumar Jain of Boise ID (US)
Indra V. Chary of Boise ID (US)
Richard J. Hill of Boise ID (US)
MICROELECTRONIC DEVICES INCLUDING STADIUM STRUCTURES, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18513430 titled 'MICROELECTRONIC DEVICES INCLUDING STADIUM STRUCTURES, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS
Simplified Explanation
The microelectronic device described in the patent application includes a unique stack structure with alternating tiers of conductive and insulative structures, blocks with stadium structures and crest regions, as well as additional and further dielectric slot structures that extend through the tiers.
Key Features and Innovation
- Stack structure with alternating conductive and insulative tiers
- Blocks with stadium structures and crest regions
- Additional dielectric slot structures extending across crest regions and into stadium structures
- Further dielectric slot structure intersecting additional slot structures and extending through the tiers
Potential Applications
This technology could be applied in the development of advanced microelectronic devices, integrated circuits, and semiconductor components.
Problems Solved
The technology addresses the need for improved performance and efficiency in microelectronic devices by optimizing the stack structure and incorporating unique dielectric slot structures.
Benefits
- Enhanced performance and efficiency in microelectronic devices
- Improved signal transmission and reduced interference
- Potential for miniaturization and increased functionality
Commercial Applications
- Semiconductor industry for the development of advanced microelectronic devices
- Electronics manufacturing for integrated circuits and high-performance components
Prior Art
Readers interested in prior art related to this technology could explore patents and research papers in the field of microelectronics, semiconductor devices, and integrated circuit design.
Frequently Updated Research
Researchers in the field of microelectronics and semiconductor technology may be conducting ongoing studies to further optimize stack structures and dielectric slot designs for improved device performance.
Questions about Microelectronic Device Innovation
What are the potential applications of this technology in the semiconductor industry?
This technology could be utilized in the development of advanced microelectronic devices, integrated circuits, and semiconductor components, leading to improved performance and efficiency.
How does the unique stack structure with alternating tiers contribute to the performance of the microelectronic device?
The alternating tiers of conductive and insulative structures in the stack enhance signal transmission, reduce interference, and optimize the overall functionality of the device.
Original Abstract Submitted
A microelectronic device includes a stack structure comprising blocks, additional dielectric slot structures, and a further dielectric slot structure. The stack structure includes alternating tiers of conductive and insulative structures. A block comprises a stadium structure and crest regions. The stadium structure includes staircase structures having steps comprising edges of the tiers. The additional dielectric slot structures individually extend in the first direction across a first of the crest regions and at least partially into the stadium structure. The additional dielectric slot structures are separated from one another in a second direction orthogonal to the first direction and individually vertically extend through the tiers. The further dielectric slot structure extends in the second direction across a second of the crest regions. The further dielectric slot structure intersects at least one of the additional dielectric slot structures and vertically extend through the tiers.
