18513303. REDUCED RESISTIVITY FOR ACCESS LINES IN A MEMORY ARRAY simplified abstract (Micron Technology, Inc.)
Contents
- 1 REDUCED RESISTIVITY FOR ACCESS LINES IN A MEMORY ARRAY
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 REDUCED RESISTIVITY FOR ACCESS LINES IN A MEMORY ARRAY - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
REDUCED RESISTIVITY FOR ACCESS LINES IN A MEMORY ARRAY
Organization Name
Inventor(s)
Adam Thomas Barton of Boise ID (US)
REDUCED RESISTIVITY FOR ACCESS LINES IN A MEMORY ARRAY - A simplified explanation of the abstract
This abstract first appeared for US patent application 18513303 titled 'REDUCED RESISTIVITY FOR ACCESS LINES IN A MEMORY ARRAY
Simplified Explanation
The patent application describes methods, systems, and devices for reducing resistivity for access lines in a memory array. A first metal layer is formed above a via that connects an access line of a memory array with a corresponding driver. The first metal layer is oxidized, and then a second metal layer is formed above the oxidized first metal layer. Access lines of the memory device are formed from the second metal layer, the oxidized first metal layer, or both.
- Explanation of the patent:
- Formation of a first metal layer above a via connecting an access line to a driver. - Oxidation of the first metal layer. - Formation of a second metal layer above the oxidized first metal layer. - Creation of access lines from the second metal layer and/or the oxidized first metal layer.
Potential Applications
The technology described in the patent application could be applied in the manufacturing of memory devices, such as DRAM or flash memory, to improve the performance and efficiency of access lines within the memory array.
Problems Solved
- Reduced resistivity in access lines of a memory array. - Enhanced connectivity between access lines and drivers. - Improved overall performance of the memory device.
Benefits
- Increased speed and reliability of data transfer within the memory array. - Enhanced efficiency and reduced power consumption. - Extended lifespan of the memory device.
Potential Commercial Applications
- Optimizing memory devices for faster data processing
- Improving the performance of storage solutions in electronic devices
Possible Prior Art
There may be prior art related to methods for reducing resistivity in access lines of memory arrays, such as techniques for enhancing conductivity in metal layers within semiconductor devices.
Unanswered Questions
How does the oxidation process affect the resistivity of the metal layers?
The oxidation process may alter the properties of the metal layers, but the specific impact on resistivity is not detailed in the abstract.
What are the specific memory array configurations that can benefit from this technology?
The abstract mentions memory arrays in general, but it does not specify the types or sizes of memory arrays that could be optimized using the described methods.
Original Abstract Submitted
Methods, systems, and devices for reduced resistivity for access lines in a memory array are described. A first metal layer may be formed above a via that is configured to couple an access line of a memory array with a corresponding driver. The first metal layer may be oxidized, and then a second metal layer may be formed above the oxidized first metal layer. One or more access lines of the memory device may be formed from the second metal layer, the oxidized first metal layer, or both.
