18512894. LOW RESISTIVITY GAPFILL simplified abstract (Applied Materials, Inc.)
Contents
- 1 LOW RESISTIVITY GAPFILL
LOW RESISTIVITY GAPFILL
Organization Name
Inventor(s)
Tsung-Han Yang of San Jose CA (US)
Zhen Liu of Santa Clara CA (US)
Yongqian Gao of Sunnyvale CA (US)
Wenting Hou of San Jose CA (US)
Rongjun Wang of Dublin CA (US)
LOW RESISTIVITY GAPFILL - A simplified explanation of the abstract
This abstract first appeared for US patent application 18512894 titled 'LOW RESISTIVITY GAPFILL
Simplified Explanation
Embodiments of the disclosure relate to methods for metal gapfill with lower resistivity. Specific embodiments provide methods of forming a tungsten gapfill without a high resistance nucleation layer. Some embodiments of the disclosure utilize a nucleation underlayer to promote growth of the metal gapfill.
- Methods for metal gapfill with lower resistivity
- Formation of tungsten gapfill without high resistance nucleation layer
- Use of nucleation underlayer to promote growth of metal gapfill
Potential Applications
The technology described in the patent application could have potential applications in the semiconductor industry for improving the performance of integrated circuits by enhancing the conductivity of metal gapfills.
Problems Solved
This technology addresses the issue of high resistance nucleation layers in metal gapfill processes, which can negatively impact the performance of electronic devices.
Benefits
The benefits of this technology include improved conductivity of metal gapfills, leading to enhanced performance of integrated circuits. Additionally, the methods described in the patent application could result in more efficient manufacturing processes.
Potential Commercial Applications
- "Enhancing Conductivity in Metal Gapfills for Semiconductor Industry Applications"
Possible Prior Art
There may be prior art related to methods for improving the conductivity of metal gapfills in semiconductor manufacturing processes, but further research would be needed to identify specific examples.
Unanswered Questions
How does this technology compare to existing methods for metal gapfill processes in terms of cost-effectiveness?
The cost-effectiveness of implementing this technology compared to existing methods is not addressed in the patent application. Further analysis would be needed to determine the economic viability of adopting these methods.
What impact could this technology have on the overall performance and reliability of electronic devices?
While the patent application discusses the benefits of improved conductivity in metal gapfills, the specific impact on the overall performance and reliability of electronic devices is not detailed. Additional testing and research would be necessary to assess these potential effects.
Original Abstract Submitted
Embodiments of the disclosure relate to methods for metal gapfill with lower resistivity. Specific embodiments provide methods of forming a tungsten gapfill without a high resistance nucleation layer. Some embodiments of the disclosure utilize a nucleation underlayer to promote growth of the metal gapfill.
