18512682. Semiconductor Device Structure with Interconnect Structure and Method for Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
Semiconductor Device Structure with Interconnect Structure and Method for Forming the Same
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chih-Chieh Chang of Zhubei City (TW)
Hui-Chi Huang of Zhubei City (TW)
Kei-Wei Chen of Tainan City (TW)
Semiconductor Device Structure with Interconnect Structure and Method for Forming the Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 18512682 titled 'Semiconductor Device Structure with Interconnect Structure and Method for Forming the Same
Simplified Explanation
The method involves forming a semiconductor device structure by:
- Forming a first metal layer on a substrate
- Depositing a dielectric layer over the first metal layer
- Creating a trench in the dielectric layer
- Applying a surface treatment process to the trench's sidewall surface to create a hydrophobic layer
- Depositing a metal material in the trench and over the hydrophobic layer to form a via structure
Potential Applications
This technology can be applied in the semiconductor industry for the manufacturing of advanced electronic devices.
Problems Solved
- Enhances the adhesion of metal material in the trench
- Improves the reliability and performance of semiconductor devices
- Reduces the risk of short circuits and other electrical issues
Benefits
- Increased efficiency in semiconductor device manufacturing
- Enhanced device performance and reliability
- Improved overall quality of electronic products
Original Abstract Submitted
A method for forming a semiconductor device structure is provided. The method includes forming a first metal layer over a substrate, forming a dielectric layer over the first metal layer. The method includes forming a trench in the dielectric layer, and performing a surface treatment process on a sidewall surface of the trench to form a hydrophobic layer. The hydrophobic layer is formed on a sidewall surface of the dielectric layer. The method further includes depositing a metal material in the trench and over the hydrophobic layer to form a via structure.
