18512341. IMAGE SENSOR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
IMAGE SENSOR
Organization Name
Inventor(s)
IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18512341 titled 'IMAGE SENSOR
The abstract describes an image sensor with pixels containing photoelectric conversion regions and floating diffusion regions, along with pixel transistors and transmission gates of varying widths.
- Image sensor with pixels containing photoelectric conversion regions and floating diffusion regions
- Pixel transistors with pixel gates on the substrate surface
- First transmission gate between photoelectric conversion region and floating diffusion region
- Second transmission gate with width less than the first transmission gate
- Innovative design for improved image sensor performance
Potential Applications: - Digital cameras - Smartphones - Surveillance systems - Medical imaging devices
Problems Solved: - Enhanced image quality - Improved signal processing - Reduced noise levels in captured images
Benefits: - Higher resolution images - Better low-light performance - Increased dynamic range
Commercial Applications: Title: Advanced Image Sensors for Enhanced Imaging Devices This technology can be utilized in various commercial applications such as digital cameras, smartphones, surveillance systems, and medical imaging devices, enhancing their performance and image quality.
Questions about Image Sensors: 1. How does the innovative design of this image sensor improve image quality?
- The design of the image sensor with transmission gates of varying widths helps in reducing noise levels and improving signal processing, resulting in higher quality images.
2. What are the potential commercial applications of this advanced image sensor technology?
- This technology can be applied in digital cameras, smartphones, surveillance systems, and medical imaging devices, enhancing their performance and image quality.
Original Abstract Submitted
An image sensor includes a substrate having a plurality of pixels. Each pixel includes a photoelectric conversion region and a floating diffusion region in the substrate, a pixel transistor including a pixel gate on the first surface of the substrate, a first transmission gate between the photoelectric conversion region and the floating diffusion region, extending into the substrate, and having a first width in a horizontal direction, and a second transmission gate between the photoelectric conversion region and the floating diffusion region, arranged between the pixel gate and the first transmission gate when viewed in a plan view, and having a second width less than the first width in the horizontal direction.
