18512096. TRENCH PATTERN FOR TRENCH CAPACITOR YIELD IMPROVEMENT simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
TRENCH PATTERN FOR TRENCH CAPACITOR YIELD IMPROVEMENT
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Yuan-Sheng Huang of Taichung (TW)
TRENCH PATTERN FOR TRENCH CAPACITOR YIELD IMPROVEMENT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18512096 titled 'TRENCH PATTERN FOR TRENCH CAPACITOR YIELD IMPROVEMENT
Simplified Explanation
The patent application is for a trench capacitor design that includes different capacitor segments with varying widths and pitches to improve yield.
- The trench capacitor is on a substrate and has multiple capacitor segments.
- The capacitor segments follow a trench pattern and are spaced with a pitch on an axis.
- There is an edge capacitor segment at the edge of the trench capacitor and a center capacitor segment at the center.
- The edge capacitor segment has a wider width than the center capacitor segment, and the pitch is greater at the edge.
- The wider width helps with stress absorption, while the greater pitch increases substrate rigidity at the edge to reduce bending and trench burnout.
Potential Applications
This technology could be applied in semiconductor manufacturing processes where trench capacitors are used, such as in memory devices or integrated circuits.
Problems Solved
1. Reduced substrate bending and trench burnout. 2. Improved yield in manufacturing processes. 3. Enhanced stress absorption capabilities.
Benefits
1. Increased reliability of trench capacitors. 2. Improved performance of semiconductor devices. 3. Cost-effective manufacturing with higher yields.
Original Abstract Submitted
Various embodiments of the present disclosure are directed towards a trench capacitor with a trench pattern for yield improvement. The trench capacitor is on a substrate and comprises a plurality of capacitor segments. The capacitor segments extend into the substrate according to the trench pattern and are spaced with a pitch on an axis. The plurality of capacitor segments comprises an edge capacitor segment at an edge of the trench capacitor and a center capacitor segment at a center of the trench capacitor. The edge capacitor segment has a greater width than the center capacitor segment and/or the pitch is greater at the edge capacitor segment than at the center capacitor segment. The greater width may facilitate stress absorption and the greater pitch may increase substrate rigidity at the edge of the trench capacitor where thermal expansion stress is greatest, thereby reducing substrate bending and trench burnout for yield improvements.
