18511396. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM COMPRISING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM COMPRISING THE SAME
Organization Name
Inventor(s)
Bonghyun Choi of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM COMPRISING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18511396 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM COMPRISING THE SAME
The semiconductor device described in the patent application consists of various layers and structures on a substrate, including key pattern regions, insulating layers, barrier metal layers, and pattern structures.
- The device features a capping insulating layer, a barrier metal layer, and a substrate layer that work together to provide insulation and protection for the components.
- The pattern insulating layer in the key pattern region extends through the barrier metal layer, enhancing the device's functionality and durability.
- The stacked structure on the upper base layer and pattern insulating layer adds complexity and functionality to the device.
- The first pattern structures overlapping the pattern insulating layer improve the device's performance and efficiency.
Potential Applications: This technology could be used in the manufacturing of advanced semiconductor devices for various electronic applications, such as microprocessors, memory chips, and sensors.
Problems Solved: The technology addresses the need for improved insulation, protection, and functionality in semiconductor devices, enhancing their performance and reliability.
Benefits: The technology offers enhanced insulation, protection, and functionality for semiconductor devices, leading to improved performance, durability, and efficiency.
Commercial Applications: This technology could have significant commercial applications in the semiconductor industry, leading to the development of more advanced and reliable electronic devices.
Questions about Semiconductor Device Technology: 1. How does the barrier metal layer contribute to the overall performance of the semiconductor device? 2. What are the potential challenges in implementing this technology on a large scale?
Original Abstract Submitted
A semiconductor device includes a substrate comprising a chip region and a scribe lane region including a first key pattern region, a capping insulating layer disposed on the scribe lane region, a barrier metal layer covering the capping insulating layer and an inner wall of a via hole penetrating the capping insulating layer, a substrate layer disposed on the barrier metal layer and filling the via hole, an insulating plate and an upper base layer disposed on the substrate layer, a pattern insulating layer disposed on the capping insulating layer in the first key pattern region, a stacked structure disposed on the upper base layer and the pattern insulating layer, and first pattern structures overlapping the pattern insulating layer in a vertical direction and penetrating the stacked structure and the pattern insulating layer, wherein the pattern insulating layer extends through the barrier metal layer in the first key pattern region.
