18510949. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18510949 titled 'SEMICONDUCTOR DEVICES
The semiconductor device described in the patent application includes a first active pattern protruding from a substrate, a gate structure with a gate insulation layer and a gate pattern laterally stacked on a first sidewall of the first active pattern, and first conductive patterns contacting the gate insulation layer and protruding from a sidewall of the gate structure.
- The gate pattern faces the first sidewall of the first active pattern and extends parallel to the upper surface of the substrate.
- The first conductive patterns may face second and third sidewalls of the first active pattern and are spaced apart from the first active pattern.
Potential Applications: - This technology could be used in the manufacturing of advanced semiconductor devices for various electronic applications. - It may find applications in the development of high-performance integrated circuits and microprocessors.
Problems Solved: - This innovation addresses the need for improved semiconductor device structures with enhanced performance and functionality. - It solves challenges related to the design and fabrication of complex semiconductor components.
Benefits: - Enhanced performance and efficiency in semiconductor devices. - Improved integration and miniaturization capabilities for electronic systems.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology has the potential to revolutionize the semiconductor industry by enabling the development of more advanced and efficient electronic devices. It could be utilized in various commercial applications such as smartphones, computers, and other consumer electronics.
Questions about the technology: 1. How does this semiconductor device structure improve overall device performance? 2. What are the specific advantages of having first conductive patterns protruding from the gate structure in this design?
Frequently Updated Research: Stay updated on the latest advancements in semiconductor device technology to leverage the full potential of this innovation in future electronic applications.
Original Abstract Submitted
A semiconductor device includes a first active pattern protruding from a substrate; a gate structure including a gate insulation layer and a gate pattern laterally stacked on a first sidewall of the first active pattern, the gate pattern facing the first sidewall of the first active pattern and extending a first direction parallel to an upper surface of the substrate; and first conductive patterns contacting the gate insulation layer and protruding from a sidewall of the gate structure. The first conductive patterns may be disposed to face second and third sidewalls in the first direction of the first active pattern, and first conductive patterns may be spaced apart from the first active pattern.
