18510787. CAPACITANCE STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
CAPACITANCE STRUCTURE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
CAPACITANCE STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18510787 titled 'CAPACITANCE STRUCTURE
Simplified Explanation
The patent application describes a capacitance structure that includes a metal nitride layer, a compositionally graded film formed by thermal oxidation on the metal nitride layer, and a dielectric layer on the compositionally graded film.
- Metal nitride layer, such as titanium nitride (TiN), forms the base of the capacitance structure.
- Compositionally graded film is created on the metal nitride layer through thermal oxidation.
- Dielectric layer is placed on top of the compositionally graded film.
Potential Applications
- Capacitors in electronic devices
- Memory storage devices
- Integrated circuits
Problems Solved
- Improved capacitance performance
- Enhanced durability and reliability
- Better integration with existing electronic components
Benefits
- Higher capacitance efficiency
- Increased device longevity
- Improved overall electronic device performance
Original Abstract Submitted
A capacitance structure comprises a metal nitride layer, such as a titanium nitride (TiN) layer, a compositionally graded film formed on a surface of the metal nitride layer by thermal oxidation, and a dielectric layer disposed on the compositionally graded film. A method of manufacturing a capacitance structure includes forming a conductive layer, performing thermal oxidation of a surface of the conductive layer to produce a compositionally graded film on the conductive layer, and forming a dielectric layer on the compositionally graded film.
