18510464. MEMORY STRUCTURES WITH VOIDS simplified abstract (Micron Technology, Inc.)
Contents
- 1 MEMORY STRUCTURES WITH VOIDS
MEMORY STRUCTURES WITH VOIDS
Organization Name
Inventor(s)
Alessandro Calderoni of Boise ID (US)
Durai Vishak Nirmal Ramaswamy of Boise ID (US)
MEMORY STRUCTURES WITH VOIDS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18510464 titled 'MEMORY STRUCTURES WITH VOIDS
Simplified Explanation
The abstract describes methods, systems, and devices for memory structures with voids, where memory cells are formed on sacrificial structures and voids are created between adjacent columns of memory cells.
- Memory architecture includes voids between adjacent columns of memory cells.
- Sacrificial structures are formed with liner material on sidewalls, extending in the column direction.
- Memory cells are formed on sacrificial structures by patterning conductive material for bottom electrodes, ferroelectric material, and plate lines.
- Voids are created by removing sacrificial structures between columns of memory cells.
Potential Applications
This technology could be applied in:
- Non-volatile memory devices
- High-density memory arrays
Problems Solved
- Increased memory density
- Improved memory cell performance
Benefits
- Enhanced memory storage capacity
- Better memory cell reliability
Potential Commercial Applications
Optimized for SEO: "Memory Structure Innovation for High-Density Data Storage"
- Semiconductor industry
- Memory chip manufacturers
Possible Prior Art
No prior art is known at this time.
Unanswered Questions
How does this technology impact memory cell read/write speeds?
This article does not delve into the specific effects on memory cell read/write speeds. Further research or testing may be needed to determine the impact of voids between memory cell columns on performance.
What are the potential challenges in scaling this technology for mass production?
The article does not address the challenges in scaling this technology for mass production. Factors such as cost, manufacturing complexity, and yield rates could be significant hurdles that need to be explored further.
Original Abstract Submitted
Methods, systems, and devices for memory structures with voids are described. A memory architecture may include voids between adjacent columns of memory cells. For example, a memory array may be manufactured by forming one or more sacrificial structures, as well as a liner material on sidewalls of the sacrificial structures, extending in the column direction. Memory cells may be formed on the sacrificial structures by patterning a conductive material to form bottom electrodes, forming a ferroelectric material adjacent to the bottom electrodes, and forming a set of plate lines over the ferroelectric material. The sacrificial structures may then be removed to form voids between at least some adjacent columns of memory cells.
