18509825. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
Organization Name
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor(s)
Shunpei Yamazaki of Setagaya (JP)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18509825 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a method for improving the interface characteristics of a thin film transistor by performing oxygen radical treatment on the gate insulating layer. This results in a peak oxygen concentration at the interface between the gate insulating layer and the semiconductor layer, with an increasing oxygen concentration gradient towards the interface.
- Explanation of the patent/innovation:
* Oxygen radical treatment is performed on the gate insulating layer. * Peak oxygen concentration is achieved at the interface with the semiconductor layer. * Oxygen concentration gradient increases towards the interface.
Potential Applications
The technology described in the patent application could be applied in the manufacturing of thin film transistors for various electronic devices such as displays, sensors, and integrated circuits.
Problems Solved
- Improved interface characteristics of thin film transistors.
- Prevention of impurity mixing such as moisture.
- Enhanced electric characteristics and reliability of semiconductor devices.
Benefits
- High productivity in manufacturing semiconductor devices.
- Favorable interface characteristics without impurity mixing.
- Excellent electric characteristics and high reliability of thin film transistors.
Potential Commercial Applications
- Optimized Interface Characteristics for Thin Film Transistors in Semiconductor Devices
Possible Prior Art
There may be prior art related to the use of oxygen radical treatment in semiconductor device manufacturing processes, but specific examples are not provided in the patent application.
Unanswered Questions
=== How does the oxygen radical treatment impact the overall performance of the thin film transistor? The patent application focuses on the interface characteristics of the thin film transistor, but it does not delve into the broader implications of the oxygen radical treatment on the transistor's functionality and efficiency.
=== Are there any limitations or drawbacks to the proposed method of oxygen radical treatment? While the patent application highlights the benefits of the oxygen radical treatment, it does not address any potential limitations or challenges that may arise during the implementation of this method in semiconductor device manufacturing processes.
Original Abstract Submitted
An object is to provide favorable interface characteristics of a thin film transistor including an oxide semiconductor layer without mixing of an impurity such as moisture. Another object is to provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability, and a method by which a semiconductor device can be manufactured with high productivity. A main point is to perform oxygen radical treatment on a surface of a gate insulating layer. Accordingly, there is a peak of the oxygen concentration at an interface between the gate insulating layer and a semiconductor layer, and the oxygen concentration of the gate insulating layer has a concentration gradient. The oxygen concentration is increased toward the interface between the gate insulating layer and the semiconductor layer.
